Graphene optical modulator on silicon waveguide controlled by fine metal-Top gate

D. Y. Hori, R. Kou, T. Tsuchizawa, Y. Kobayashi, Y. Harada, H. Hibino, T. Yamamoto, K. Yamada, H. Nakajima

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We proposed a fine-metal gated graphene optical modulator on a CMOS compatible silicon photonic platform. A maximum extinction ratio of 1.2dB is realized by using a 25-nm thick Al2O3 gate capacitor. Optimized device structure and initial Fermi energy dependences are discussed.

    Original languageEnglish
    Title of host publication2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016
    PublisherIEEE Computer Society
    Pages90-91
    Number of pages2
    Volume2016-November
    ISBN (Electronic)9781509019038
    DOIs
    Publication statusPublished - 2016 Nov 8
    Event13th IEEE International Conference on Group IV Photonics, GFP 2016 - Shanghai, China
    Duration: 2016 Aug 242016 Aug 26

    Other

    Other13th IEEE International Conference on Group IV Photonics, GFP 2016
    CountryChina
    CityShanghai
    Period16/8/2416/8/26

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Ceramics and Composites
    • Electronic, Optical and Magnetic Materials

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