Green light emission from the edges of organic single-crystal transistors

Yohei Yomogida, Taishi Takenobu, Hidekazu Shimotani, Kosuke Sawabe, Satria Zulkarnaen Bisri, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa

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    37 Citations (Scopus)

    Abstract

    We have fabricated ambipolar light-emitting field-effect transistors made of 1,4-bis(5-phenylthiophen-2-yl)benzene (AC5) single crystals, which have 35% fluorescent quantum efficiency. The obtained hole and electron mobilities were 2.9× 10-1 cm2 /V s and 6.7× 10-3 cm 2 /V s, respectively. These are the highest values among AC5 transistors. Importantly, although the light emission from the crystal surface was less than the detection level of the camera, we observed bright and polarized light emission from the edge of the single crystals. This polarized edge emission is attributed to the strong self-assembled light-confining nature and perfectly aligned transition dipole moments, which are advantageous for future laser devices.

    Original languageEnglish
    Article number173301
    JournalApplied Physics Letters
    Volume97
    Issue number17
    DOIs
    Publication statusPublished - 2010 Oct 25

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Yomogida, Y., Takenobu, T., Shimotani, H., Sawabe, K., Bisri, S. Z., Yamao, T., Hotta, S., & Iwasa, Y. (2010). Green light emission from the edges of organic single-crystal transistors. Applied Physics Letters, 97(17), [173301]. https://doi.org/10.1063/1.3504690