Growth and characterization of vapor deposited indium phosphide

B. W. Wessels, Masahide Inuishi

Research output: Contribution to journalArticle

Abstract

The chemical vapor deposition of indium phosphide using the In/HCl/PH3/H2 reactant system is described. The deposition kinetics were studied as function of reactant concentration and substrate temperature. Studies of deposition of both polycrystalline and single crystalline material indicated that the growth rate of the thin films was limited by surface kinetics via a Langmuir-type absorption mechanism. Stoichiometry of the gas phase influenced the electrical properties of the as-grown epitaxial layers. For a group V/III ratio of 0.70 in the growth ambient, net donor densities of 1.5 x 1016 cm-3 were observed in the undoped epitaxial layers. Transient capacitance spectroscopy indicated deep level concentrations of the order 1-10 x 1014 cm-3 in the n and p-type epitaxial InP.

Original languageEnglish
Pages (from-to)55-61
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume323
DOIs
Publication statusPublished - 1982 Sep 15
Externally publishedYes

Fingerprint

Indium phosphide
indium phosphides
Epitaxial layers
Kinetics
Vapors
vapors
Stoichiometry
Deep level transient spectroscopy
Chemical Vapor Deposition
Electrical Properties
kinetics
Capacitance
Thin Films
Spectroscopy
stoichiometry
Chemical vapor deposition
Electric properties
Absorption
Gases
capacitance

ASJC Scopus subject areas

  • Applied Mathematics
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Growth and characterization of vapor deposited indium phosphide. / Wessels, B. W.; Inuishi, Masahide.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 323, 15.09.1982, p. 55-61.

Research output: Contribution to journalArticle

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