Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han; T. S. Stavrinides; M. Kobayashi; R. L. Gunshor; M. M. Hagerott; A. V. Nurmikko

doi:10.1007/BF02661618

Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han^*, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 10¹⁹ cm^-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

Original language	English
Pages (from-to)	485-488
Number of pages	4
Journal	Journal of Electronic Materials
Volume	22
Issue number	5
DOIs	https://doi.org/10.1007/BF02661618
Publication status	Published - 1993 May 1
Externally published	Yes

Keywords

Molecular beam epitaxy
nitrogen-doped ZnTe
p-ZnTe/n-AISb diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/BF02661618

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title = "Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes",

abstract = "In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.",

keywords = "Molecular beam epitaxy, nitrogen-doped ZnTe, p-ZnTe/n-AISb diodes",

author = "J. Han and Stavrinides, {T. S.} and M. Kobayashi and Gunshor, {R. L.} and Hagerott, {M. M.} and Nurmikko, {A. V.}",

year = "1993",

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TY - JOUR

T1 - Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

AU - Han, J.

AU - Stavrinides, T. S.

AU - Kobayashi, M.

AU - Gunshor, R. L.

AU - Hagerott, M. M.

AU - Nurmikko, A. V.

PY - 1993/5/1

Y1 - 1993/5/1

N2 - In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

AB - In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

KW - Molecular beam epitaxy

KW - nitrogen-doped ZnTe

KW - p-ZnTe/n-AISb diodes

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JO - Journal of Electronic Materials

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Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

Abstract

Keywords

ASJC Scopus subject areas

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