Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

Original languageEnglish
Pages (from-to)485-488
Number of pages4
JournalJournal of Electronic Materials
Volume22
Issue number5
DOIs
Publication statusPublished - 1993 May 1

Keywords

  • Molecular beam epitaxy
  • nitrogen-doped ZnTe
  • p-ZnTe/n-AISb diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M., & Nurmikko, A. V. (1993). Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes. Journal of Electronic Materials, 22(5), 485-488. https://doi.org/10.1007/BF02661618