Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

Taizo Nakasu, Wei Che Sun, Masakazu Kobayashi, Toshiaki Asahi

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.

    Original languageEnglish
    Pages (from-to)1-6
    Number of pages6
    JournalJournal of Electronic Materials
    DOIs
    Publication statusAccepted/In press - 2016 Nov 30

    Fingerprint

    Aluminum Oxide
    Sapphire
    Crystal orientation
    sapphire
    Substrates
    crystals
    Thin films
    thin films
    Epilayers
    Molecular beam epitaxy
    flat surfaces
    Poles
    x ray diffraction
    poles
    molecular beam epitaxy
    Diffraction
    Heat treatment
    Transmission electron microscopy
    Heating
    X rays

    Keywords

    • Molecular beam epitaxy
    • nanofaceted structure
    • pole figure
    • sapphire
    • zinc telluride

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry
    • Electrical and Electronic Engineering

    Cite this

    Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure. / Nakasu, Taizo; Sun, Wei Che; Kobayashi, Masakazu; Asahi, Toshiaki.

    In: Journal of Electronic Materials, 30.11.2016, p. 1-6.

    Research output: Contribution to journalArticle

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    abstract = "ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.",
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