Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

Robert Edgington, Syunsuke Sato, Yuichiro Ishiyama, Richard Morris, Richard B. Jackman*, Hiroshi Kawarada

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3.

Original languageEnglish
Article number033710
JournalJournal of Applied Physics
Issue number3
Publication statusPublished - 2012 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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