Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

Robert Edgington; Syunsuke Sato; Yuichiro Ishiyama; Richard Morris; Richard B. Jackman; Hiroshi Kawarada

doi:10.1063/1.3682760

Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

Robert Edgington, Syunsuke Sato, Yuichiro Ishiyama, Richard Morris, Richard B. Jackman^*, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 ¹³ cm ^-2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 ²⁰ cm ^-3.

Original language	English
Article number	033710
Journal	Journal of Applied Physics
Volume	111
Issue number	3
DOIs	https://doi.org/10.1063/1.3682760
Publication status	Published - 2012 Feb 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces",

abstract = "A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3.",

author = "Robert Edgington and Syunsuke Sato and Yuichiro Ishiyama and Richard Morris and Jackman, {Richard B.} and Hiroshi Kawarada",

note = "Funding Information: The UCL team acknowledge the UKs Engineering and Physical Sciences Research Council (EPSRC) for the award of a project to study δ-doped diamond structures (EP/H020055/1). Niall Tumilty of the UCL team is thanked for useful discussions relating to this work. One of us (R.E.) thanks the Japanese Society for the Promotion of Science (JSPS) for the award of a Research Fellowship to spend time at the University of Waseda. The work by one of the authors (H.K.) was supported by a Grant-in-Aid for Fundamental Research S (19106006) and A (23246069) from MEXT Japan.",

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AU - Edgington, Robert

AU - Sato, Syunsuke

AU - Ishiyama, Yuichiro

AU - Morris, Richard

AU - Jackman, Richard B.

AU - Kawarada, Hiroshi

N1 - Funding Information: The UCL team acknowledge the UKs Engineering and Physical Sciences Research Council (EPSRC) for the award of a project to study δ-doped diamond structures (EP/H020055/1). Niall Tumilty of the UCL team is thanked for useful discussions relating to this work. One of us (R.E.) thanks the Japanese Society for the Promotion of Science (JSPS) for the award of a Research Fellowship to spend time at the University of Waseda. The work by one of the authors (H.K.) was supported by a Grant-in-Aid for Fundamental Research S (19106006) and A (23246069) from MEXT Japan.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3.

AB - A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3.

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Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

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