Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si

Yoshiko Tsuji, Makoto Mizukami, Suguru Noda

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The growth mechanism of epitaxial CoSi2 was studied using Co/Ti/Si multilayer solid phase reaction. Results showed that phase formation was controlled by diffusion of Co through the growing CoSix, although at the early stage of CoSi2 growth the diffusion of Co could be controlled by a Ti layer. A reactive deposition technique was also evaluated by using a conventional magnetron sputtering system. Results showed that an epitaxial CoSi2 layer was formed by controlling the Co sputtering rate not to exceed the Co diffusion rate through CoSix. However, the surface of CoSi2 became rough when the deposition rate was much slower than the Co diffusion rate through CoSix. The roughness was caused by the formation of CoSi2 (111) facets at the interface between CoSi2 and the Si substrate. Si/CoSi2/Si double heteroepitaxial structures were fabricated when Si and Co were sequentially sputter-deposited on a Si (100) substrate.

Original languageEnglish
Pages (from-to)3989-3995
Number of pages7
JournalThin Solid Films
Volume516
Issue number12
DOIs
Publication statusPublished - 2008 Apr 30
Externally publishedYes

Fingerprint

Epitaxial growth
epitaxy
Epitaxial layers
Substrates
Deposition rates
Magnetron sputtering
Sputtering
solid phases
flat surfaces
magnetron sputtering
Multilayers
roughness
sputtering
Surface roughness

Keywords

  • Cobalt silicide
  • Epitaxy
  • Si
  • Sputtering
  • X-ray diffraction

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si. / Tsuji, Yoshiko; Mizukami, Makoto; Noda, Suguru.

In: Thin Solid Films, Vol. 516, No. 12, 30.04.2008, p. 3989-3995.

Research output: Contribution to journalArticle

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N2 - The growth mechanism of epitaxial CoSi2 was studied using Co/Ti/Si multilayer solid phase reaction. Results showed that phase formation was controlled by diffusion of Co through the growing CoSix, although at the early stage of CoSi2 growth the diffusion of Co could be controlled by a Ti layer. A reactive deposition technique was also evaluated by using a conventional magnetron sputtering system. Results showed that an epitaxial CoSi2 layer was formed by controlling the Co sputtering rate not to exceed the Co diffusion rate through CoSix. However, the surface of CoSi2 became rough when the deposition rate was much slower than the Co diffusion rate through CoSix. The roughness was caused by the formation of CoSi2 (111) facets at the interface between CoSi2 and the Si substrate. Si/CoSi2/Si double heteroepitaxial structures were fabricated when Si and Co were sequentially sputter-deposited on a Si (100) substrate.

AB - The growth mechanism of epitaxial CoSi2 was studied using Co/Ti/Si multilayer solid phase reaction. Results showed that phase formation was controlled by diffusion of Co through the growing CoSix, although at the early stage of CoSi2 growth the diffusion of Co could be controlled by a Ti layer. A reactive deposition technique was also evaluated by using a conventional magnetron sputtering system. Results showed that an epitaxial CoSi2 layer was formed by controlling the Co sputtering rate not to exceed the Co diffusion rate through CoSix. However, the surface of CoSi2 became rough when the deposition rate was much slower than the Co diffusion rate through CoSix. The roughness was caused by the formation of CoSi2 (111) facets at the interface between CoSi2 and the Si substrate. Si/CoSi2/Si double heteroepitaxial structures were fabricated when Si and Co were sequentially sputter-deposited on a Si (100) substrate.

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