Growth mechanism of PTO on MgO at initial stage

K. Nishida, K. Shirakata, M. Osada, M. Kakihana, T. Katoda

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Growth mechanism of a lead titanate (PbTiO3, PTO) thin film at the initial stage has been made clear. The mechanism is strongly affected by accumulation and release of stress. Flatness of the surface and the crystallographic orientation of the PTO film change with growth mode.

Original languageEnglish
Pages (from-to)323-328
Number of pages6
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
Publication statusPublished - 2003 Jun 30
Externally publishedYes

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flatness
Lead
Thin films
thin films
lead titanate

Keywords

  • Film orientation
  • Growth mechanism
  • PTO
  • Residual stress
  • Surface roughness

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Nishida, K., Shirakata, K., Osada, M., Kakihana, M., & Katoda, T. (2003). Growth mechanism of PTO on MgO at initial stage. Applied Surface Science, 216(1-4 SPEC.), 323-328. https://doi.org/10.1016/S0169-4332(03)00455-0

Growth mechanism of PTO on MgO at initial stage. / Nishida, K.; Shirakata, K.; Osada, M.; Kakihana, M.; Katoda, T.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 323-328.

Research output: Contribution to journalArticle

Nishida, K, Shirakata, K, Osada, M, Kakihana, M & Katoda, T 2003, 'Growth mechanism of PTO on MgO at initial stage', Applied Surface Science, vol. 216, no. 1-4 SPEC., pp. 323-328. https://doi.org/10.1016/S0169-4332(03)00455-0
Nishida K, Shirakata K, Osada M, Kakihana M, Katoda T. Growth mechanism of PTO on MgO at initial stage. Applied Surface Science. 2003 Jun 30;216(1-4 SPEC.):323-328. https://doi.org/10.1016/S0169-4332(03)00455-0
Nishida, K. ; Shirakata, K. ; Osada, M. ; Kakihana, M. ; Katoda, T. / Growth mechanism of PTO on MgO at initial stage. In: Applied Surface Science. 2003 ; Vol. 216, No. 1-4 SPEC. pp. 323-328.
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