Abstract
The initial stage during vapor deposition has been extensively studied in physical vapor deposition (PVD) processes, and nucleation theories have been successfully used to model island nucleation processes during PVD. Compared with the extensive research in PVD, there has been less work on understanding the initial stage in chemical vapor deposition (CVD) processes, despite the technological and commercial importance of CVD-based manufacturing systems. In this work we briefly review the nucleation theories developed for PVD processes and consider the validity of them for modeling the initial stage of CVD processes. One characteristic of CVD processes is the existence of an incubation time. Recent research indicates that the incubation time can be caused by the different reactivity of precursors nucleating on substrates and islands. We proposed process indices to evaluate the relative importance of sticking probabilities and desorption of adsorbates on the incubation time. The differing precursor reactivity between islands and substrates may also affect the island growth mode. This situation in CVD processes differs from that in PVD processes, for which current nucleation theories were developed, and therefore prevents the direct application of PVD nucleation theories to CVD processes. Therefore, to model CVD processes, a nucleation model is needed that is sensitive to the different reactivity of precursors to islands and substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 281-289 |
| Number of pages | 9 |
| Journal | Applied Surface Science |
| Volume | 245 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2005 May 30 |
| Externally published | Yes |
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Keywords
- Chemical vapor deposition
- Growth mode
- Nanoparticle
- Nucleation
- Physical vapor deposition
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
Cite this
Growth mode during initial stage of chemical vapor deposition. / Kajikawa, Yuya; Noda, Suguru.
In: Applied Surface Science, Vol. 245, No. 1-4, 30.05.2005, p. 281-289.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth mode during initial stage of chemical vapor deposition
AU - Kajikawa, Yuya
AU - Noda, Suguru
PY - 2005/5/30
Y1 - 2005/5/30
N2 - The initial stage during vapor deposition has been extensively studied in physical vapor deposition (PVD) processes, and nucleation theories have been successfully used to model island nucleation processes during PVD. Compared with the extensive research in PVD, there has been less work on understanding the initial stage in chemical vapor deposition (CVD) processes, despite the technological and commercial importance of CVD-based manufacturing systems. In this work we briefly review the nucleation theories developed for PVD processes and consider the validity of them for modeling the initial stage of CVD processes. One characteristic of CVD processes is the existence of an incubation time. Recent research indicates that the incubation time can be caused by the different reactivity of precursors nucleating on substrates and islands. We proposed process indices to evaluate the relative importance of sticking probabilities and desorption of adsorbates on the incubation time. The differing precursor reactivity between islands and substrates may also affect the island growth mode. This situation in CVD processes differs from that in PVD processes, for which current nucleation theories were developed, and therefore prevents the direct application of PVD nucleation theories to CVD processes. Therefore, to model CVD processes, a nucleation model is needed that is sensitive to the different reactivity of precursors to islands and substrates.
AB - The initial stage during vapor deposition has been extensively studied in physical vapor deposition (PVD) processes, and nucleation theories have been successfully used to model island nucleation processes during PVD. Compared with the extensive research in PVD, there has been less work on understanding the initial stage in chemical vapor deposition (CVD) processes, despite the technological and commercial importance of CVD-based manufacturing systems. In this work we briefly review the nucleation theories developed for PVD processes and consider the validity of them for modeling the initial stage of CVD processes. One characteristic of CVD processes is the existence of an incubation time. Recent research indicates that the incubation time can be caused by the different reactivity of precursors nucleating on substrates and islands. We proposed process indices to evaluate the relative importance of sticking probabilities and desorption of adsorbates on the incubation time. The differing precursor reactivity between islands and substrates may also affect the island growth mode. This situation in CVD processes differs from that in PVD processes, for which current nucleation theories were developed, and therefore prevents the direct application of PVD nucleation theories to CVD processes. Therefore, to model CVD processes, a nucleation model is needed that is sensitive to the different reactivity of precursors to islands and substrates.
KW - Chemical vapor deposition
KW - Growth mode
KW - Nanoparticle
KW - Nucleation
KW - Physical vapor deposition
UR - http://www.scopus.com/inward/record.url?scp=17044394360&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=17044394360&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2004.10.021
DO - 10.1016/j.apsusc.2004.10.021
M3 - Article
AN - SCOPUS:17044394360
VL - 245
SP - 281
EP - 289
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 1-4
ER -