GROWTH OF A ZnSe-ZnTe STRAINED-LAYER SUPERLATTICE ON AN InP SUBSTRATE BY MOLECULAR BEAM EPITAXY.

Masakazu Kobayashi, Naoki Mino, Hironori Katagiri, Ryuhei Kimura, Makoto Konagai, Kiyoshi Takahashi

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

A ZnSe-ZnTe strained-layer superlattice (SLS) was grown on an InP substrate by molecular beam epitaxy for the first time. The x-ray diffraction measurement technique was used to confirm the existence of the high quality SLS structure. Overall quality may also be inferred from the observed quantum size effects of the photoluminescence data.

Original languageEnglish
Pages (from-to)296-297
Number of pages2
JournalApplied Physics Letters
Volume48
Issue number4
Publication statusPublished - 1986 Jan 1
Externally publishedYes

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molecular beam epitaxy
x ray diffraction
photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M., & Takahashi, K. (1986). GROWTH OF A ZnSe-ZnTe STRAINED-LAYER SUPERLATTICE ON AN InP SUBSTRATE BY MOLECULAR BEAM EPITAXY. Applied Physics Letters, 48(4), 296-297.

GROWTH OF A ZnSe-ZnTe STRAINED-LAYER SUPERLATTICE ON AN InP SUBSTRATE BY MOLECULAR BEAM EPITAXY. / Kobayashi, Masakazu; Mino, Naoki; Katagiri, Hironori; Kimura, Ryuhei; Konagai, Makoto; Takahashi, Kiyoshi.

In: Applied Physics Letters, Vol. 48, No. 4, 01.01.1986, p. 296-297.

Research output: Contribution to journalArticle

Kobayashi, M, Mino, N, Katagiri, H, Kimura, R, Konagai, M & Takahashi, K 1986, 'GROWTH OF A ZnSe-ZnTe STRAINED-LAYER SUPERLATTICE ON AN InP SUBSTRATE BY MOLECULAR BEAM EPITAXY.', Applied Physics Letters, vol. 48, no. 4, pp. 296-297.
Kobayashi, Masakazu ; Mino, Naoki ; Katagiri, Hironori ; Kimura, Ryuhei ; Konagai, Makoto ; Takahashi, Kiyoshi. / GROWTH OF A ZnSe-ZnTe STRAINED-LAYER SUPERLATTICE ON AN InP SUBSTRATE BY MOLECULAR BEAM EPITAXY. In: Applied Physics Letters. 1986 ; Vol. 48, No. 4. pp. 296-297.
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