Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy

Masakazu Kobayashi; Naoki Mino; Hironori Katagiri; Ryuhei Kimura; Makoto Konagai; Kiyoshi Takahashi

doi:10.1063/1.96585

Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy

Masakazu Kobayashi^*, Naoki Mino, Hironori Katagiri, Ryuhei Kimura, Makoto Konagai, Kiyoshi Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

A ZnSe-ZnTe strained-layer superlattice (SLS) was grown on an InP substrate by molecular beam epitaxy for the first time. The x-ray diffraction measurement technique was used to confirm the existence of the high quality SLS structure. Overall quality may also be inferred from the observed quantum size effects of the photoluminescence data.

Original language	English
Pages (from-to)	296-297
Number of pages	2
Journal	Applied Physics Letters
Volume	48
Issue number	4
DOIs	https://doi.org/10.1063/1.96585
Publication status	Published - 1986 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.96585

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abstract = "A ZnSe-ZnTe strained-layer superlattice (SLS) was grown on an InP substrate by molecular beam epitaxy for the first time. The x-ray diffraction measurement technique was used to confirm the existence of the high quality SLS structure. Overall quality may also be inferred from the observed quantum size effects of the photoluminescence data.",

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AU - Kobayashi, Masakazu

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AU - Kimura, Ryuhei

AU - Konagai, Makoto

AU - Takahashi, Kiyoshi

PY - 1986/12/1

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AB - A ZnSe-ZnTe strained-layer superlattice (SLS) was grown on an InP substrate by molecular beam epitaxy for the first time. The x-ray diffraction measurement technique was used to confirm the existence of the high quality SLS structure. Overall quality may also be inferred from the observed quantum size effects of the photoluminescence data.

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Growth of a ZnSe-ZnTe strained-layer superlattice on an InP substrate by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

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