Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials

Aya Uruno; Ayaka Usui; Masakazu Kobayashi

doi:10.1007/s11664-014-3135-0

Growth of AgGaTe₂ and AgAlTe₂ layers for novel photovoltaic materials

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

AgGaTe₂ and AgAlTe₂ layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe₂ and AgAlTe₂ by x-ray diffraction (XRD). The AgAlTe₂ layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe₂ layer was different from that of the AgAlTe₂ layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe₂ layers had an epitaxial relationship with the a-plane sapphire substrates.

Original language	English
Pages (from-to)	2874-2878
Number of pages	5
Journal	Journal of Electronic Materials
Volume	43
Issue number	8
DOIs	https://doi.org/10.1007/s11664-014-3135-0
Publication status	Published - 2014 Aug

Keywords

Chalcopyrite
closed-space sublimation
pole figure

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-014-3135-0

Cite this

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title = "Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials",

abstract = "AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.",

keywords = "Chalcopyrite, closed-space sublimation, pole figure",

author = "Aya Uruno and Ayaka Usui and Masakazu Kobayashi",

note = "Funding Information: This work was supported in part by Waseda University Research Initiatives, and by a Grant of Strategic Research Foundation Grant-aided Project for Private Universities from MEXT.",

year = "2014",

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language = "English",

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AU - Uruno, Aya

AU - Usui, Ayaka

AU - Kobayashi, Masakazu

N1 - Funding Information: This work was supported in part by Waseda University Research Initiatives, and by a Grant of Strategic Research Foundation Grant-aided Project for Private Universities from MEXT.

PY - 2014/8

Y1 - 2014/8

N2 - AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.

AB - AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.

KW - Chalcopyrite

KW - closed-space sublimation

KW - pole figure

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