Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.

    Original languageEnglish
    Pages (from-to)2874-2878
    Number of pages5
    JournalJournal of Electronic Materials
    Volume43
    Issue number8
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    Diffraction
    Aluminum Oxide
    Sapphire
    X rays
    x ray diffraction
    Sublimation
    Substrates
    sapphire
    Poles
    Solar cells
    sublimation
    poles
    solar cells
    diffraction

    Keywords

    • Chalcopyrite
    • closed-space sublimation
    • pole figure

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials. / Uruno, Aya; Usui, Ayaka; Kobayashi, Masakazu.

    In: Journal of Electronic Materials, Vol. 43, No. 8, 2014, p. 2874-2878.

    Research output: Contribution to journalArticle

    @article{cf6b95ca58714885ba3cbb4640c1f836,
    title = "Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials",
    abstract = "AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.",
    keywords = "Chalcopyrite, closed-space sublimation, pole figure",
    author = "Aya Uruno and Ayaka Usui and Masakazu Kobayashi",
    year = "2014",
    doi = "10.1007/s11664-014-3135-0",
    language = "English",
    volume = "43",
    pages = "2874--2878",
    journal = "Journal of Electronic Materials",
    issn = "0361-5235",
    publisher = "Springer New York",
    number = "8",

    }

    TY - JOUR

    T1 - Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials

    AU - Uruno, Aya

    AU - Usui, Ayaka

    AU - Kobayashi, Masakazu

    PY - 2014

    Y1 - 2014

    N2 - AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.

    AB - AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.

    KW - Chalcopyrite

    KW - closed-space sublimation

    KW - pole figure

    UR - http://www.scopus.com/inward/record.url?scp=84904256637&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84904256637&partnerID=8YFLogxK

    U2 - 10.1007/s11664-014-3135-0

    DO - 10.1007/s11664-014-3135-0

    M3 - Article

    AN - SCOPUS:84904256637

    VL - 43

    SP - 2874

    EP - 2878

    JO - Journal of Electronic Materials

    JF - Journal of Electronic Materials

    SN - 0361-5235

    IS - 8

    ER -