Abstract
AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 2874-2878 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 43 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 |
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Keywords
- Chalcopyrite
- closed-space sublimation
- pole figure
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials. / Uruno, Aya; Usui, Ayaka; Kobayashi, Masakazu.
In: Journal of Electronic Materials, Vol. 43, No. 8, 2014, p. 2874-2878.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials
AU - Uruno, Aya
AU - Usui, Ayaka
AU - Kobayashi, Masakazu
PY - 2014
Y1 - 2014
N2 - AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.
AB - AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.
KW - Chalcopyrite
KW - closed-space sublimation
KW - pole figure
UR - http://www.scopus.com/inward/record.url?scp=84904256637&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904256637&partnerID=8YFLogxK
U2 - 10.1007/s11664-014-3135-0
DO - 10.1007/s11664-014-3135-0
M3 - Article
AN - SCOPUS:84904256637
VL - 43
SP - 2874
EP - 2878
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 8
ER -