Growth of AgGaTe2 layers by a closed-space sublimation method

    Research output: Contribution to journalArticle

    17 Citations (Scopus)

    Abstract

    AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.

    Original languageEnglish
    Pages (from-to)859-862
    Number of pages4
    JournalJournal of Electronic Materials
    Volume42
    Issue number5
    DOIs
    Publication statusPublished - 2013

    Fingerprint

    Sublimation
    sublimation
    x ray diffraction
    Diffraction
    X rays
    Stoichiometry
    Temperature
    temperature
    stoichiometry
    Transmission electron microscopy
    transmission electron microscopy
    Substrates

    Keywords

    • AgGaTe
    • chalcopyrite compound
    • Closed-space sublimation method

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Materials Chemistry

    Cite this

    Growth of AgGaTe2 layers by a closed-space sublimation method. / Uruno, Aya; Kobayashi, Masakazu.

    In: Journal of Electronic Materials, Vol. 42, No. 5, 2013, p. 859-862.

    Research output: Contribution to journalArticle

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