Abstract
AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.
| Original language | English |
|---|---|
| Pages (from-to) | 859-862 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 42 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 Jan 28 |
Keywords
- AgGaTe
- Closed-space sublimation method
- chalcopyrite compound
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Uruno, A., & Kobayashi, M. (2013). Growth of AgGaTe2 layers by a closed-space sublimation method. Journal of Electronic Materials, 42(5), 859-862. https://doi.org/10.1007/s11664-012-2461-3