Abstract
AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.
| Original language | English |
|---|---|
| Pages (from-to) | 859-862 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 42 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 |
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Keywords
- AgGaTe
- chalcopyrite compound
- Closed-space sublimation method
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
Cite this
Growth of AgGaTe2 layers by a closed-space sublimation method. / Uruno, Aya; Kobayashi, Masakazu.
In: Journal of Electronic Materials, Vol. 42, No. 5, 2013, p. 859-862.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth of AgGaTe2 layers by a closed-space sublimation method
AU - Uruno, Aya
AU - Kobayashi, Masakazu
PY - 2013
Y1 - 2013
N2 - AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.
AB - AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.
KW - AgGaTe
KW - chalcopyrite compound
KW - Closed-space sublimation method
UR - http://www.scopus.com/inward/record.url?scp=84878546904&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84878546904&partnerID=8YFLogxK
U2 - 10.1007/s11664-012-2461-3
DO - 10.1007/s11664-012-2461-3
M3 - Article
AN - SCOPUS:84878546904
VL - 42
SP - 859
EP - 862
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 5
ER -