Growth of AgGaTe2 layers by a closed-space sublimation method

Aya Uruno; Masakazu Kobayashi

doi:10.1007/s11664-012-2461-3

Growth of AgGaTe₂ layers by a closed-space sublimation method

Aya Uruno, Masakazu Kobayashi

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

AgGaTe₂ layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.

Original language	English
Pages (from-to)	859-862
Number of pages	4
Journal	Journal of Electronic Materials
Volume	42
Issue number	5
DOIs	https://doi.org/10.1007/s11664-012-2461-3
Publication status	Published - 2013 May

Keywords

Closed-space sublimation method
chalcopyrite compound

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Growth of AgGaTe2 layers by a closed-space sublimation method",

abstract = "AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.",

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