Growth of AgGaTe2 on a- and c-plane sapphire by closed-space sublimation and analysis of the orientation by pole figure measurement

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed-space sublimation method. Various samples have been prepared with various source temperatures, holding times, and temperature differentials. In this study, the variation of source temperature was primarily aimed at improving the stoichiometry of the film. The grown films were evaluated by X-ray diffraction (XRD) measurements. When the sample was grown at a high temperature, namely, above 800 °, the formation of Ag-Te compounds was observed. The Ag-Te compounds exhibited a high degree of crystallinity when the layer was grown on c-plane sapphire substrates. By using a pole figure, it was possible to study the orientation of the film, and AgGaTe2 layers were shown to have a preferential orientation in the (103) on a-sapphire.

    Original languageEnglish
    Article number015501
    JournalJapanese Journal of Applied Physics
    Volume53
    Issue number1
    DOIs
    Publication statusPublished - 2014 Jan

    Fingerprint

    Sublimation
    sublimation
    Sapphire
    Poles
    sapphire
    poles
    Temperature
    temperature
    stoichiometry
    crystallinity
    Substrates
    Stoichiometry
    diffraction
    X ray diffraction
    x rays

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

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    abstract = "AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed-space sublimation method. Various samples have been prepared with various source temperatures, holding times, and temperature differentials. In this study, the variation of source temperature was primarily aimed at improving the stoichiometry of the film. The grown films were evaluated by X-ray diffraction (XRD) measurements. When the sample was grown at a high temperature, namely, above 800 °, the formation of Ag-Te compounds was observed. The Ag-Te compounds exhibited a high degree of crystallinity when the layer was grown on c-plane sapphire substrates. By using a pole figure, it was possible to study the orientation of the film, and AgGaTe2 layers were shown to have a preferential orientation in the (103) on a-sapphire.",
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    AU - Kobayashi, Masakazu

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