Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

M. Kobayashi*, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.

Original languageEnglish
Pages (from-to)1684-1687
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number3
DOIs
Publication statusPublished - 2000 May

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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