Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

Masakazu Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.

    Original languageEnglish
    Pages (from-to)1684-1687
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume18
    Issue number3
    DOIs
    Publication statusPublished - 2000 May

    Fingerprint

    Molecular beam epitaxy
    Semiconductor quantum dots
    Light emitting diodes
    Wetting
    Photoluminescence
    Reflection high energy electron diffraction
    Nucleation
    Deposits

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures. / Kobayashi, Masakazu; Kitamura, K.; Umeya, H.; Jia, A. W.; Yoshikawa, A.; Shimotomai, M.; Kato, Y.; Takahashi, K.

    In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 3, 05.2000, p. 1684-1687.

    Research output: Contribution to journalArticle

    Kobayashi, Masakazu ; Kitamura, K. ; Umeya, H. ; Jia, A. W. ; Yoshikawa, A. ; Shimotomai, M. ; Kato, Y. ; Takahashi, K. / Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 ; Vol. 18, No. 3. pp. 1684-1687.
    @article{18f8d80e7c6e4691aaa3a2e6589651b4,
    title = "Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures",
    abstract = "CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.",
    author = "Masakazu Kobayashi and K. Kitamura and H. Umeya and Jia, {A. W.} and A. Yoshikawa and M. Shimotomai and Y. Kato and K. Takahashi",
    year = "2000",
    month = "5",
    doi = "10.1116/1.591452",
    language = "English",
    volume = "18",
    pages = "1684--1687",
    journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
    issn = "1071-1023",
    publisher = "AVS Science and Technology Society",
    number = "3",

    }

    TY - JOUR

    T1 - Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

    AU - Kobayashi, Masakazu

    AU - Kitamura, K.

    AU - Umeya, H.

    AU - Jia, A. W.

    AU - Yoshikawa, A.

    AU - Shimotomai, M.

    AU - Kato, Y.

    AU - Takahashi, K.

    PY - 2000/5

    Y1 - 2000/5

    N2 - CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.

    AB - CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.

    UR - http://www.scopus.com/inward/record.url?scp=0034187782&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0034187782&partnerID=8YFLogxK

    U2 - 10.1116/1.591452

    DO - 10.1116/1.591452

    M3 - Article

    AN - SCOPUS:0034187782

    VL - 18

    SP - 1684

    EP - 1687

    JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

    JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

    SN - 1071-1023

    IS - 3

    ER -