Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

Masakazu Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

    Research output: Contribution to journalArticle

    16 Citations (Scopus)

    Abstract

    CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.

    Original languageEnglish
    Pages (from-to)1684-1687
    Number of pages4
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume18
    Issue number3
    DOIs
    Publication statusPublished - 2000 May

      Fingerprint

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this