Growth of Continuous Monolayer Graphene with Millimeter-sized Domains Using Industrially Safe Conditions

Xingyi Wu, Guofang Zhong, Lorenzo D'Arsié, Hisashi Sugime, Santiago Esconjauregui, Alex W. Robertson, John Robertson

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We demonstrate the growth of continuous monolayer graphene films with millimeter-sized domains on Cu foils under intrinsically safe, atmospheric pressure growth conditions, suitable for application in roll-to-roll reactors. Previous attempts to grow large domains in graphene have been limited to isolated graphene single crystals rather than as part of an industrially useable continuous film. With both appropriate pre-treatment of the Cu and optimization of the CH 4 supply, we show that it is possible to grow continuous films of monolayer graphene with millimeter scale domains within 80 min by chemical vapour deposition. The films are grown under industrially safe conditions, i.e., the flammable gases (H2 and CH4) are diluted to well below their lower explosive limit. The high quality, spatial uniformity, and low density of domain boundaries are demonstrated by charge carrier mobility measurements, scanning electron microscope, electron diffraction study, and Raman mapping. The hole mobility reaches as high as ∼5,700 cm2 V-1 s-1 in ambient conditions. The growth process of such high-quality graphene with a low H2 concentration and short growth times widens the possibility of industrial mass production.

Original languageEnglish
Article number21152
JournalScientific Reports
Volume6
DOIs
Publication statusPublished - 2016 Feb 17
Externally publishedYes

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graphene
flammable gases
hole mobility
carrier mobility
pretreatment
charge carriers
low concentrations
foils
atmospheric pressure
electron diffraction
electron microscopes
reactors
vapor deposition
methylidyne
optimization
scanning
single crystals

ASJC Scopus subject areas

  • General

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Growth of Continuous Monolayer Graphene with Millimeter-sized Domains Using Industrially Safe Conditions. / Wu, Xingyi; Zhong, Guofang; D'Arsié, Lorenzo; Sugime, Hisashi; Esconjauregui, Santiago; Robertson, Alex W.; Robertson, John.

In: Scientific Reports, Vol. 6, 21152, 17.02.2016.

Research output: Contribution to journalArticle

Wu, Xingyi ; Zhong, Guofang ; D'Arsié, Lorenzo ; Sugime, Hisashi ; Esconjauregui, Santiago ; Robertson, Alex W. ; Robertson, John. / Growth of Continuous Monolayer Graphene with Millimeter-sized Domains Using Industrially Safe Conditions. In: Scientific Reports. 2016 ; Vol. 6.
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