Abstract
The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.
| Original language | English |
|---|---|
| Pages (from-to) | 3-6 |
| Number of pages | 4 |
| Journal | Materials Science Forum |
| Volume | 600-603 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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Keywords
- 100Mm-diameter SiC substrate
- Lateral enlargement growth
- Thermoelastic stress
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. / Nakabayashi, M.; Fujimoto, T.; Katsuno, M.; Ohtani, N.; Tsuge, H.; Yashiro, H.; Aigo, T.; Hoshino, T.; Hirano, H.; Tatsumi, Kohei.
In: Materials Science Forum, Vol. 600-603, 2009, p. 3-6.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities
AU - Nakabayashi, M.
AU - Fujimoto, T.
AU - Katsuno, M.
AU - Ohtani, N.
AU - Tsuge, H.
AU - Yashiro, H.
AU - Aigo, T.
AU - Hoshino, T.
AU - Hirano, H.
AU - Tatsumi, Kohei
PY - 2009
Y1 - 2009
N2 - The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.
AB - The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.
KW - 100Mm-diameter SiC substrate
KW - Lateral enlargement growth
KW - Thermoelastic stress
UR - http://www.scopus.com/inward/record.url?scp=63849187444&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=63849187444&partnerID=8YFLogxK
U2 - 10.4028/3-908453-11-9
DO - 10.4028/3-908453-11-9
M3 - Article
AN - SCOPUS:63849187444
VL - 600-603
SP - 3
EP - 6
JO - Materials Science Forum
JF - Materials Science Forum
SN - 0255-5476
ER -