Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge, H. Yashiro, T. Aigo, T. Hoshino, H. Hirano, Kohei Tatsumi

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

Original languageEnglish
Pages (from-to)3-6
Number of pages4
JournalMaterials Science Forum
Volume600-603
DOIs
Publication statusPublished - 2009
Externally publishedYes

Fingerprint

cracks
Cracks
Crystal growth
Crystals
crystals
Mechanical stability
Crystallization
Tensile stress
Temperature distribution
tensile stress
crystal growth
temperature distribution
optimization

Keywords

  • 100Mm-diameter SiC substrate
  • Lateral enlargement growth
  • Thermoelastic stress

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Nakabayashi, M., Fujimoto, T., Katsuno, M., Ohtani, N., Tsuge, H., Yashiro, H., ... Tatsumi, K. (2009). Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. Materials Science Forum, 600-603, 3-6. https://doi.org/10.4028/3-908453-11-9

Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. / Nakabayashi, M.; Fujimoto, T.; Katsuno, M.; Ohtani, N.; Tsuge, H.; Yashiro, H.; Aigo, T.; Hoshino, T.; Hirano, H.; Tatsumi, Kohei.

In: Materials Science Forum, Vol. 600-603, 2009, p. 3-6.

Research output: Contribution to journalArticle

Nakabayashi, M, Fujimoto, T, Katsuno, M, Ohtani, N, Tsuge, H, Yashiro, H, Aigo, T, Hoshino, T, Hirano, H & Tatsumi, K 2009, 'Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities', Materials Science Forum, vol. 600-603, pp. 3-6. https://doi.org/10.4028/3-908453-11-9
Nakabayashi M, Fujimoto T, Katsuno M, Ohtani N, Tsuge H, Yashiro H et al. Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. Materials Science Forum. 2009;600-603:3-6. https://doi.org/10.4028/3-908453-11-9
Nakabayashi, M. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Tsuge, H. ; Yashiro, H. ; Aigo, T. ; Hoshino, T. ; Hirano, H. ; Tatsumi, Kohei. / Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. In: Materials Science Forum. 2009 ; Vol. 600-603. pp. 3-6.
@article{68b1e86af90446d297ba5944e4c3ff91,
title = "Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities",
abstract = "The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.",
keywords = "100Mm-diameter SiC substrate, Lateral enlargement growth, Thermoelastic stress",
author = "M. Nakabayashi and T. Fujimoto and M. Katsuno and N. Ohtani and H. Tsuge and H. Yashiro and T. Aigo and T. Hoshino and H. Hirano and Kohei Tatsumi",
year = "2009",
doi = "10.4028/3-908453-11-9",
language = "English",
volume = "600-603",
pages = "3--6",
journal = "Materials Science Forum",
issn = "0255-5476",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

AU - Nakabayashi, M.

AU - Fujimoto, T.

AU - Katsuno, M.

AU - Ohtani, N.

AU - Tsuge, H.

AU - Yashiro, H.

AU - Aigo, T.

AU - Hoshino, T.

AU - Hirano, H.

AU - Tatsumi, Kohei

PY - 2009

Y1 - 2009

N2 - The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

AB - The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

KW - 100Mm-diameter SiC substrate

KW - Lateral enlargement growth

KW - Thermoelastic stress

UR - http://www.scopus.com/inward/record.url?scp=63849187444&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63849187444&partnerID=8YFLogxK

U2 - 10.4028/3-908453-11-9

DO - 10.4028/3-908453-11-9

M3 - Article

VL - 600-603

SP - 3

EP - 6

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

ER -