Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

M. Nakabayashi; T. Fujimoto; M. Katsuno; N. Ohtani; H. Tsuge; H. Yashiro; T. Aigo; T. Hoshino; H. Hirano; K. Tatsumi

Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge, H. Yashiro, T. Aigo, T. Hoshino, H. Hirano, K. Tatsumi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2007
Editors	Akira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
Publisher	Trans Tech Publications Ltd
Pages	3-6
Number of pages	4
ISBN (Print)	9780878493579
Publication status	Published - 2009 Jan 1
Externally published	Yes
Event	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan Duration: 2007 Oct 14 → 2007 Oct 19

Publication series

Name	Materials Science Forum
Volume	600-603
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Conference

Conference	12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Country	Japan
City	Otsu
Period	07/10/14 → 07/10/19

Keywords

100Mm-diameter SiC substrate
Lateral enlargement growth
Thermoelastic stress

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Nakabayashi, M., Fujimoto, T., Katsuno, M., Ohtani, N., Tsuge, H., Yashiro, H., Aigo, T., Hoshino, T., Hirano, H., & Tatsumi, K. (2009). Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. In A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 3-6). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.

Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. / Nakabayashi, M.; Fujimoto, T.; Katsuno, M.; Ohtani, N.; Tsuge, H.; Yashiro, H.; Aigo, T.; Hoshino, T.; Hirano, H.; Tatsumi, K.

Silicon Carbide and Related Materials 2007. ed. / Akira Suzuki; Hajime Okumura; Kenji Fukuda; Shin-ichi Nishizawa; Tsunenobu Kimoto; Takashi Fuyuki. Trans Tech Publications Ltd, 2009. p. 3-6 (Materials Science Forum; Vol. 600-603).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakabayashi, M, Fujimoto, T, Katsuno, M, Ohtani, N, Tsuge, H, Yashiro, H, Aigo, T, Hoshino, T, Hirano, H & Tatsumi, K 2009, Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. in A Suzuki, H Okumura, K Fukuda, S Nishizawa, T Kimoto & T Fuyuki (eds), Silicon Carbide and Related Materials 2007. Materials Science Forum, vol. 600-603, Trans Tech Publications Ltd, pp. 3-6, 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007, Otsu, Japan, 07/10/14.

Nakabayashi, M. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Tsuge, H. ; Yashiro, H. ; Aigo, T. ; Hoshino, T. ; Hirano, H. ; Tatsumi, K. / Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. Silicon Carbide and Related Materials 2007. editor / Akira Suzuki ; Hajime Okumura ; Kenji Fukuda ; Shin-ichi Nishizawa ; Tsunenobu Kimoto ; Takashi Fuyuki. Trans Tech Publications Ltd, 2009. pp. 3-6 (Materials Science Forum).

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abstract = "The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.",

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AU - Nakabayashi, M.

AU - Fujimoto, T.

AU - Katsuno, M.

AU - Ohtani, N.

AU - Tsuge, H.

AU - Yashiro, H.

AU - Aigo, T.

AU - Hoshino, T.

AU - Hirano, H.

AU - Tatsumi, K.

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N2 - The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

AB - The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

KW - 100Mm-diameter SiC substrate

KW - Lateral enlargement growth

KW - Thermoelastic stress

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Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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