Abstract
The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2007 |
| Editors | Takashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki |
| Publisher | Trans Tech Publications Ltd |
| Pages | 3-6 |
| Number of pages | 4 |
| ISBN (Print) | 9780878493579 |
| Publication status | Published - 2009 Jan 1 |
| Event | 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan Duration: 2007 Oct 14 → 2007 Oct 19 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 600-603 |
| ISSN (Print) | 0255-5476 |
Conference
| Conference | 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 |
|---|---|
| Country | Japan |
| City | Otsu |
| Period | 07/10/14 → 07/10/19 |
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Keywords
- 100Mm-diameter SiC substrate
- Lateral enlargement growth
- Thermoelastic stress
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Nakabayashi, M., Fujimoto, T., Katsuno, M., Ohtani, N., Tsuge, H., Yashiro, H., Aigo, T., Hoshino, T., Hirano, H., & Tatsumi, K. (2009). Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. In T. Fuyuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & A. Suzuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 3-6). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.