Growth of (Cu,C)Ba2CuOy thin films by molecular-beam epitaxy

H. Shibata, S. Karimoto, Toshiki Makimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report the growth of (Cu,C)Ba2CuOy thin films by molecular-beam epitaxy (MBE). The c-axis oriented film is obtained with a = 3.959 Å and c = 8.140 Å. The Tc values of the film on an NdGaO3 substrate are Tc(on) ∼ 35 K and Tc(zero) ∼ 18 K. The Tc(on) is increased to 70 K for a 12 nm-thick film deposited on an infinite-layer CaCuO2 buffer layer. This suggests that the layer-by-layer growth method using (Cu,C)Ba2CuOy and [CaCuO2]n-1 is a promising way to obtain higher member (Cu,C)Ba2Can-1CunOy (n ≥ 2) thin films with a higher Tc. We also find that the Ba-Cu-O phase with c ∼ 4.0 Å, which is known as the 'infinite-layer BaCuO2' phase, can be obtained only in a slightly CO2 atmosphere. This means that the phase contains carbon in its structure.

Original languageEnglish
Pages (from-to)939-941
Number of pages3
JournalPhysica C: Superconductivity and its Applications
Volume463-465
Issue numberSUPPL.
DOIs
Publication statusPublished - 2007 Oct 1
Externally publishedYes

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Thin films
Buffer layers
thin films
Thick films
Carbon
Substrates
thick films
buffers
atmospheres
carbon

Keywords

  • MBE
  • Oxycarbonate
  • Superconductor
  • Thin films

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth of (Cu,C)Ba2CuOy thin films by molecular-beam epitaxy. / Shibata, H.; Karimoto, S.; Makimoto, Toshiki.

In: Physica C: Superconductivity and its Applications, Vol. 463-465, No. SUPPL., 01.10.2007, p. 939-941.

Research output: Contribution to journalArticle

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