Growth of CuGaSe2 layers on closely lattice-matched GaAs substrates by migration-enhanced epitaxy

Miki Fujita, Atsushi Kawaharazuka, Jiro Nishinaga, Klaus H. Ploog, Yoshiji Horikoshi

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Abstract

CuGaSe2 single-crystal films are grown on the As-stabilized (2 × 4) surface of (001) GaAs by migration-enhanced epitaxy (MEE), where Cu+Ga and Se are alternately deposited. The growth process is monitored by refraction high-energy electron diffraction (RHEED) in the [110] azimuth. Under the Cu-enriched growth condition, a deformed 4-fold pattern is observed in both Cu+Ga and Se deposition periods. The deformed 4-fold pattern is found to be related to the segregation of Cu2Se on the CuGaSe2 surface as confirmed by the results of X-ray diffraction (XRD) measurement. By reducing the beam equivalent pressure of Cu (Cu-BEP), clear 4-fold patterns appear in both Cu+Ga and Se deposition periods instead of deformed 4-fold patterns. Further reduction of Cu-BEP results in clear 4- and 2-fold patterns for Cu+Ga and Se deposition periods. Under these growth conditions, Cu2Se- segregation-free CGS growth is achieved. Thus, the CuGaSe2 single-crystal layers without Cu2Sesegregation are successfully grown on GaAs(001) substrates by optimizing the Cu-BEP.

Original languageEnglish
Article number125502
JournalJapanese Journal of Applied Physics
Volume50
Issue number12
DOIs
Publication statusPublished - 2011 Dec

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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