Abstract
Chalcopyrite I-III-VI2 compounds are considered as novel potential materials for solar cells. Among the variety of those compounds, CuGaTe2 and AgAlTe2 films were grown by a closed space sublimation method. Crystallinity and stoichiometry of grown films were evaluated by X-ray diffraction measurements. When CuGaTe2 powder source was used to grow CuGaTe2 films at around 840 °C of the source temperature, stoichiometric CuGaTe2could not be formed. X-ray diffraction measurements revealed that the deposited material was Cu-Ga compound. The desorption of Te was compensated by adding elemental Te in the source material. These stoichiometric CuGaTe2 films were achieved when the volume of additional Te was around twice weight of CuGaTe2. On the other hand, growth of AgAlTe2 films could be achieved when the source temperature was 800 °C, and no additional Te was introduced in the source. From X-ray diffraction measurements, it was found that these two compounds films had strong preference for the (112) orientation on the quartz substrate.
Original language | English |
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Pages (from-to) | 1190-1193 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 11 |
Issue number | 7-8 |
DOIs | |
Publication status | Published - 2014 |
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Keywords
- Chalcopyrite
- Closed space sublimation
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Growth of CuGaTe2 based compounds by a closed space sublimation method. / Usui, Ayaka; Uruno, Aya; Kobayashi, Masakazu.
In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 11, No. 7-8, 2014, p. 1190-1193.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth of CuGaTe2 based compounds by a closed space sublimation method
AU - Usui, Ayaka
AU - Uruno, Aya
AU - Kobayashi, Masakazu
PY - 2014
Y1 - 2014
N2 - Chalcopyrite I-III-VI2 compounds are considered as novel potential materials for solar cells. Among the variety of those compounds, CuGaTe2 and AgAlTe2 films were grown by a closed space sublimation method. Crystallinity and stoichiometry of grown films were evaluated by X-ray diffraction measurements. When CuGaTe2 powder source was used to grow CuGaTe2 films at around 840 °C of the source temperature, stoichiometric CuGaTe2could not be formed. X-ray diffraction measurements revealed that the deposited material was Cu-Ga compound. The desorption of Te was compensated by adding elemental Te in the source material. These stoichiometric CuGaTe2 films were achieved when the volume of additional Te was around twice weight of CuGaTe2. On the other hand, growth of AgAlTe2 films could be achieved when the source temperature was 800 °C, and no additional Te was introduced in the source. From X-ray diffraction measurements, it was found that these two compounds films had strong preference for the (112) orientation on the quartz substrate.
AB - Chalcopyrite I-III-VI2 compounds are considered as novel potential materials for solar cells. Among the variety of those compounds, CuGaTe2 and AgAlTe2 films were grown by a closed space sublimation method. Crystallinity and stoichiometry of grown films were evaluated by X-ray diffraction measurements. When CuGaTe2 powder source was used to grow CuGaTe2 films at around 840 °C of the source temperature, stoichiometric CuGaTe2could not be formed. X-ray diffraction measurements revealed that the deposited material was Cu-Ga compound. The desorption of Te was compensated by adding elemental Te in the source material. These stoichiometric CuGaTe2 films were achieved when the volume of additional Te was around twice weight of CuGaTe2. On the other hand, growth of AgAlTe2 films could be achieved when the source temperature was 800 °C, and no additional Te was introduced in the source. From X-ray diffraction measurements, it was found that these two compounds films had strong preference for the (112) orientation on the quartz substrate.
KW - Chalcopyrite
KW - Closed space sublimation
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UR - http://www.scopus.com/inward/citedby.url?scp=84904035560&partnerID=8YFLogxK
U2 - 10.1002/pssc.201300584
DO - 10.1002/pssc.201300584
M3 - Article
AN - SCOPUS:84904035560
VL - 11
SP - 1190
EP - 1193
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 7-8
ER -