Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1×1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures (approximately 580°C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4+CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
|Number of pages||5|
|Journal||Journal of Crystal Growth|
|Issue number||1 -4 pt 2|
|Publication status||Published - 1990 Jan|
ASJC Scopus subject areas
- Condensed Matter Physics