Growth of diamond films at low pressure using magneto-microwave plasma CVD

Jin Wei; Hiroshi Kawarada; Jun ichi Suzuki; Akio Hiraki

doi:10.1016/S0022-0248(08)80108-X

Growth of diamond films at low pressure using magneto-microwave plasma CVD

Jin Wei, Hiroshi Kawarada, Jun ichi Suzuki, Akio Hiraki

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 10¹¹ cm^-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH₄/H₂ or CO₂/H₂ mixture as a reaction gas, diamond films have not been obtained. However, with CH₄ + CO₂/H₂ mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

Original language	English
Pages (from-to)	1201-1205
Number of pages	5
Journal	Journal of Crystal Growth
Volume	99
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(08)80108-X
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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abstract = "Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.",

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doi = "10.1016/S0022-0248(08)80108-X",

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T1 - Growth of diamond films at low pressure using magneto-microwave plasma CVD

AU - Wei, Jin

AU - Kawarada, Hiroshi

AU - Suzuki, Jun ichi

AU - Hiraki, Akio

PY - 1990

Y1 - 1990

N2 - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

AB - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

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Growth of diamond films at low pressure using magneto-microwave plasma CVD

Abstract

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