Growth of diamond films at low pressure using magneto-microwave plasma CVD

Jin Wei; Hiroshi Kawarada; Jun ichi Suzuki; Akio Hiraki

doi:10.1016/S0022-0248(08)80108-X

Growth of diamond films at low pressure using magneto-microwave plasma CVD

Jin Wei^*, Hiroshi Kawarada, Jun ichi Suzuki, Akio Hiraki

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 10¹¹ cm^-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH₄/H₂ or CO₂/H₂ mixture as a reaction gas, diamond films have not been obtained. However, with CH₄ + CO₂/H₂ mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

Original language	English
Pages (from-to)	1201-1205
Number of pages	5
Journal	Journal of Crystal Growth
Volume	99
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(08)80108-X
Publication status	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/S0022-0248(08)80108-X

Cite this

@article{4e9778d7ac74484da4ee1916e8e28756,

title = "Growth of diamond films at low pressure using magneto-microwave plasma CVD",

abstract = "Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.",

author = "Jin Wei and Hiroshi Kawarada and Suzuki, {Jun ichi} and Akio Hiraki",

year = "1990",

doi = "10.1016/S0022-0248(08)80108-X",

language = "English",

volume = "99",

pages = "1201--1205",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Growth of diamond films at low pressure using magneto-microwave plasma CVD

AU - Wei, Jin

AU - Kawarada, Hiroshi

AU - Suzuki, Jun ichi

AU - Hiraki, Akio

PY - 1990

Y1 - 1990

N2 - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

AB - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

UR - http://www.scopus.com/inward/record.url?scp=0025235536&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025235536&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(08)80108-X

DO - 10.1016/S0022-0248(08)80108-X

M3 - Article

AN - SCOPUS:0025235536

VL - 99

SP - 1201

EP - 1205

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -

Growth of diamond films at low pressure using magneto-microwave plasma CVD

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this