Abstract
Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
| Original language | English |
|---|---|
| Pages (from-to) | 1201-1205 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 99 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1990 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Cite this
Wei, J., Kawarada, H., Suzuki, J. I., & Hiraki, A. (1990). Growth of diamond films at low pressure using magneto-microwave plasma CVD. Journal of Crystal Growth, 99(1-4), 1201-1205. https://doi.org/10.1016/S0022-0248(08)80108-X