Growth of diamond films at low pressure using magneto-microwave plasma CDV

Jin Wei, Hiroshi Kawarada, Jun ichi Suzuki, Akio Hiraki

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Abstract

Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1×1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures (approximately 580°C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4+CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

Original languageEnglish
Pages (from-to)1201-1205
Number of pages5
JournalJournal of Crystal Growth
Volume99
Issue number1 -4 pt 2
Publication statusPublished - 1990 Jan
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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