Abstract
Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1×1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures (approximately 580°C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4+CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
| Original language | English |
|---|---|
| Pages (from-to) | 1201-1205 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 99 |
| Issue number | 1 -4 pt 2 |
| Publication status | Published - 1990 Jan |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Growth of diamond films at low pressure using magneto-microwave plasma CDV. / Wei, Jin; Kawarada, Hiroshi; Suzuki, Jun ichi; Hiraki, Akio.
In: Journal of Crystal Growth, Vol. 99, No. 1 -4 pt 2, 01.1990, p. 1201-1205.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth of diamond films at low pressure using magneto-microwave plasma CDV
AU - Wei, Jin
AU - Kawarada, Hiroshi
AU - Suzuki, Jun ichi
AU - Hiraki, Akio
PY - 1990/1
Y1 - 1990/1
N2 - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1×1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures (approximately 580°C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4+CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
AB - Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1×1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures (approximately 580°C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4+CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
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M3 - Article
VL - 99
SP - 1201
EP - 1205
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1 -4 pt 2
ER -