Growth of diamond films at low pressure using magneto-microwave plasma CVD

Jin Wei*, Hiroshi Kawarada, Jun ichi Suzuki, Akio Hiraki

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)


Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.

Original languageEnglish
Pages (from-to)1201-1205
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1990
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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