Abstract
Diamond films have been grown by magneto-microwave plasma CVD at a lower pressure (0.1 Torr) than in more conventional diamond growth systems. At this pressure, a plasma with a high enough density (above 1 x 1011 cm-3) to form diamond can be obtained around the substrate which is set at the ECR condition. At low temperatures ( -580 °C), using a CH4/H2 or CO2/H2 mixture as a reaction gas, diamond films have not been obtained. However, with CH4 + CO2/H2 mixture, high quality and uniform diamond films have been obtained at low pressure (0.1 Torr) and a lower temperature (500°C). We speculate that the OH radical is important for the low temperature deposition of diamond.
Original language | English |
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Pages (from-to) | 1201-1205 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 99 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1990 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry