Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization

Hiroshi Funakubo, Tomohiro Sakai, Takayuki Watanabe, Minoru Osada, Masato Kakihana, Keisuke Saito, Yuji Noguchi, Masaru Miyayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of BIT, La-substituted BIT (BLT) and La- and V-cosubstituted BIT(BLTV) were epitaxially grown on SrRuO3//SrTiO3 substrates at 850°C by metalorganic chemical vapor deposition (MOCVD), and their electrical properties were systematically compared. All films on (100), (110) and (111)-oriented substrates were epitaxially grown with (001)-, (104)-/(014)-and (118) -preferred orientations, respectively. The leakage current density of the BLTV film was almost the same with that of the BUT film, but was smaller than that of BIT film, suggesting that the La substitution contributed to the decrease of the leakage current density especially in pseudoperovskite layer. Spontaneous polarization of the BLTV film was estimated to be almost the same with the BLT film but was smaller that that of the BIT film. This is explained by the decrease of Tc with the La substitution, while V did not contribute to the change of the Curie temperature (Tc). On the other hand, the coercive field (Ec) value of the BLTV was smaller than that of the BIT and the BLT films. As a result, La substitution contributed to the decrease of the leakage current density together with the decrease of the spontaneous polarization due to the decrease of the Tc. On the other hand, V substitution contributes to the decrease of the defects that suppress the domain motion and increases the Ec value. Therefore, each substitution of La and V plays different roles and this contribution is remarkable for the films deposited at lower temperature.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsD.Y. Kaufman, S Hoffmann-Eifert, S.R. Gilbert, S Aggarwal, M Shimizu
Pages63-68
Number of pages6
Volume748
Publication statusPublished - 2003
Externally publishedYes
EventFerroelectric Thin Films XI - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 5

Other

OtherFerroelectric Thin Films XI
CountryUnited States
CityBoston, MA
Period02/12/202/12/5

Fingerprint

Metallorganic chemical vapor deposition
Thin films
Substitution reactions
Leakage currents
Current density
Polarization
2-(4-ethoxybenzyl)-1-diethylaminoethyl-5-isothiocyanatobenzimidazole
Substrates
Curie temperature
Electric properties
Defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Funakubo, H., Sakai, T., Watanabe, T., Osada, M., Kakihana, M., Saito, K., ... Miyayama, M. (2003). Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization. In D. Y. Kaufman, S. Hoffmann-Eifert, S. R. Gilbert, S. Aggarwal, & M. Shimizu (Eds.), Materials Research Society Symposium - Proceedings (Vol. 748, pp. 63-68)

Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization. / Funakubo, Hiroshi; Sakai, Tomohiro; Watanabe, Takayuki; Osada, Minoru; Kakihana, Masato; Saito, Keisuke; Noguchi, Yuji; Miyayama, Masaru.

Materials Research Society Symposium - Proceedings. ed. / D.Y. Kaufman; S Hoffmann-Eifert; S.R. Gilbert; S Aggarwal; M Shimizu. Vol. 748 2003. p. 63-68.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Funakubo, H, Sakai, T, Watanabe, T, Osada, M, Kakihana, M, Saito, K, Noguchi, Y & Miyayama, M 2003, Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization. in DY Kaufman, S Hoffmann-Eifert, SR Gilbert, S Aggarwal & M Shimizu (eds), Materials Research Society Symposium - Proceedings. vol. 748, pp. 63-68, Ferroelectric Thin Films XI, Boston, MA, United States, 02/12/2.
Funakubo H, Sakai T, Watanabe T, Osada M, Kakihana M, Saito K et al. Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization. In Kaufman DY, Hoffmann-Eifert S, Gilbert SR, Aggarwal S, Shimizu M, editors, Materials Research Society Symposium - Proceedings. Vol. 748. 2003. p. 63-68
Funakubo, Hiroshi ; Sakai, Tomohiro ; Watanabe, Takayuki ; Osada, Minoru ; Kakihana, Masato ; Saito, Keisuke ; Noguchi, Yuji ; Miyayama, Masaru. / Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization. Materials Research Society Symposium - Proceedings. editor / D.Y. Kaufman ; S Hoffmann-Eifert ; S.R. Gilbert ; S Aggarwal ; M Shimizu. Vol. 748 2003. pp. 63-68
@inproceedings{f11e1dcefa0c43eb8519e8089badbe1f,
title = "Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization",
abstract = "Thin films of BIT, La-substituted BIT (BLT) and La- and V-cosubstituted BIT(BLTV) were epitaxially grown on SrRuO3//SrTiO3 substrates at 850°C by metalorganic chemical vapor deposition (MOCVD), and their electrical properties were systematically compared. All films on (100), (110) and (111)-oriented substrates were epitaxially grown with (001)-, (104)-/(014)-and (118) -preferred orientations, respectively. The leakage current density of the BLTV film was almost the same with that of the BUT film, but was smaller than that of BIT film, suggesting that the La substitution contributed to the decrease of the leakage current density especially in pseudoperovskite layer. Spontaneous polarization of the BLTV film was estimated to be almost the same with the BLT film but was smaller that that of the BIT film. This is explained by the decrease of Tc with the La substitution, while V did not contribute to the change of the Curie temperature (Tc). On the other hand, the coercive field (Ec) value of the BLTV was smaller than that of the BIT and the BLT films. As a result, La substitution contributed to the decrease of the leakage current density together with the decrease of the spontaneous polarization due to the decrease of the Tc. On the other hand, V substitution contributes to the decrease of the defects that suppress the domain motion and increases the Ec value. Therefore, each substitution of La and V plays different roles and this contribution is remarkable for the films deposited at lower temperature.",
author = "Hiroshi Funakubo and Tomohiro Sakai and Takayuki Watanabe and Minoru Osada and Masato Kakihana and Keisuke Saito and Yuji Noguchi and Masaru Miyayama",
year = "2003",
language = "English",
volume = "748",
pages = "63--68",
editor = "D.Y. Kaufman and S Hoffmann-Eifert and S.R. Gilbert and S Aggarwal and M Shimizu",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Growth of epitaxial site-engineered Bi4Ti3O12-basded thin films by MOCVD and their characterization

AU - Funakubo, Hiroshi

AU - Sakai, Tomohiro

AU - Watanabe, Takayuki

AU - Osada, Minoru

AU - Kakihana, Masato

AU - Saito, Keisuke

AU - Noguchi, Yuji

AU - Miyayama, Masaru

PY - 2003

Y1 - 2003

N2 - Thin films of BIT, La-substituted BIT (BLT) and La- and V-cosubstituted BIT(BLTV) were epitaxially grown on SrRuO3//SrTiO3 substrates at 850°C by metalorganic chemical vapor deposition (MOCVD), and their electrical properties were systematically compared. All films on (100), (110) and (111)-oriented substrates were epitaxially grown with (001)-, (104)-/(014)-and (118) -preferred orientations, respectively. The leakage current density of the BLTV film was almost the same with that of the BUT film, but was smaller than that of BIT film, suggesting that the La substitution contributed to the decrease of the leakage current density especially in pseudoperovskite layer. Spontaneous polarization of the BLTV film was estimated to be almost the same with the BLT film but was smaller that that of the BIT film. This is explained by the decrease of Tc with the La substitution, while V did not contribute to the change of the Curie temperature (Tc). On the other hand, the coercive field (Ec) value of the BLTV was smaller than that of the BIT and the BLT films. As a result, La substitution contributed to the decrease of the leakage current density together with the decrease of the spontaneous polarization due to the decrease of the Tc. On the other hand, V substitution contributes to the decrease of the defects that suppress the domain motion and increases the Ec value. Therefore, each substitution of La and V plays different roles and this contribution is remarkable for the films deposited at lower temperature.

AB - Thin films of BIT, La-substituted BIT (BLT) and La- and V-cosubstituted BIT(BLTV) were epitaxially grown on SrRuO3//SrTiO3 substrates at 850°C by metalorganic chemical vapor deposition (MOCVD), and their electrical properties were systematically compared. All films on (100), (110) and (111)-oriented substrates were epitaxially grown with (001)-, (104)-/(014)-and (118) -preferred orientations, respectively. The leakage current density of the BLTV film was almost the same with that of the BUT film, but was smaller than that of BIT film, suggesting that the La substitution contributed to the decrease of the leakage current density especially in pseudoperovskite layer. Spontaneous polarization of the BLTV film was estimated to be almost the same with the BLT film but was smaller that that of the BIT film. This is explained by the decrease of Tc with the La substitution, while V did not contribute to the change of the Curie temperature (Tc). On the other hand, the coercive field (Ec) value of the BLTV was smaller than that of the BIT and the BLT films. As a result, La substitution contributed to the decrease of the leakage current density together with the decrease of the spontaneous polarization due to the decrease of the Tc. On the other hand, V substitution contributes to the decrease of the defects that suppress the domain motion and increases the Ec value. Therefore, each substitution of La and V plays different roles and this contribution is remarkable for the films deposited at lower temperature.

UR - http://www.scopus.com/inward/record.url?scp=0038713721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038713721&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0038713721

VL - 748

SP - 63

EP - 68

BT - Materials Research Society Symposium - Proceedings

A2 - Kaufman, D.Y.

A2 - Hoffmann-Eifert, S

A2 - Gilbert, S.R.

A2 - Aggarwal, S

A2 - Shimizu, M

ER -