Growth of GaN with warm ammonia by molecular beam epitaxy

A. Kawaharazuka, T. Yoshizaki, K. H. Ploog, Y. Horikoshi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2 * generated by cracking ammonia molecule.

Original languageEnglish
Pages (from-to)2025-2028
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
Publication statusPublished - 2009 Mar 15

Fingerprint

Ammonia
Molecular beam epitaxy
ammonia
molecular beam epitaxy
Nitrogen
nitrogen
Molecules
gas tubes
Gases
phytotrons
molecules
Tungsten
heaters
filaments
tungsten
Crystalline materials
collisions
augmentation
gases

Keywords

  • A1. Growth models
  • A1. Surface processes
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Kawaharazuka, A., Yoshizaki, T., Ploog, K. H., & Horikoshi, Y. (2009). Growth of GaN with warm ammonia by molecular beam epitaxy. Journal of Crystal Growth, 311(7), 2025-2028. https://doi.org/10.1016/j.jcrysgro.2008.12.024

Growth of GaN with warm ammonia by molecular beam epitaxy. / Kawaharazuka, A.; Yoshizaki, T.; Ploog, K. H.; Horikoshi, Y.

In: Journal of Crystal Growth, Vol. 311, No. 7, 15.03.2009, p. 2025-2028.

Research output: Contribution to journalArticle

Kawaharazuka, A, Yoshizaki, T, Ploog, KH & Horikoshi, Y 2009, 'Growth of GaN with warm ammonia by molecular beam epitaxy', Journal of Crystal Growth, vol. 311, no. 7, pp. 2025-2028. https://doi.org/10.1016/j.jcrysgro.2008.12.024
Kawaharazuka A, Yoshizaki T, Ploog KH, Horikoshi Y. Growth of GaN with warm ammonia by molecular beam epitaxy. Journal of Crystal Growth. 2009 Mar 15;311(7):2025-2028. https://doi.org/10.1016/j.jcrysgro.2008.12.024
Kawaharazuka, A. ; Yoshizaki, T. ; Ploog, K. H. ; Horikoshi, Y. / Growth of GaN with warm ammonia by molecular beam epitaxy. In: Journal of Crystal Growth. 2009 ; Vol. 311, No. 7. pp. 2025-2028.
@article{cad058d4f1de4256a7303db430aff07d,
title = "Growth of GaN with warm ammonia by molecular beam epitaxy",
abstract = "We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2 * generated by cracking ammonia molecule.",
keywords = "A1. Growth models, A1. Surface processes, A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Nitrides, B2. Semiconducting III-V materials",
author = "A. Kawaharazuka and T. Yoshizaki and Ploog, {K. H.} and Y. Horikoshi",
year = "2009",
month = "3",
day = "15",
doi = "10.1016/j.jcrysgro.2008.12.024",
language = "English",
volume = "311",
pages = "2025--2028",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "7",

}

TY - JOUR

T1 - Growth of GaN with warm ammonia by molecular beam epitaxy

AU - Kawaharazuka, A.

AU - Yoshizaki, T.

AU - Ploog, K. H.

AU - Horikoshi, Y.

PY - 2009/3/15

Y1 - 2009/3/15

N2 - We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2 * generated by cracking ammonia molecule.

AB - We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2 * generated by cracking ammonia molecule.

KW - A1. Growth models

KW - A1. Surface processes

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting III-V materials

UR - http://www.scopus.com/inward/record.url?scp=63349102272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63349102272&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2008.12.024

DO - 10.1016/j.jcrysgro.2008.12.024

M3 - Article

AN - SCOPUS:63349102272

VL - 311

SP - 2025

EP - 2028

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 7

ER -