Growth of GaN with warm ammonia by molecular beam epitaxy

A. Kawaharazuka, T. Yoshizaki, K. H. Ploog, Y. Horikoshi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate the growth of GaN by molecular beam epitaxy with warm ammonia as a nitrogen source. Ammonia gas is heated by the tungsten filament located at the open end of the gas-tube installed in the growth chamber. By using this simple structure, the multiple collisions of molecules within the heater, thus the generation of nitrogen molecule, can be suppressed. The crystalline quality of the grown GaN layer is significantly improved by introducing the warm ammonia. This effect can be explained by the enhancement of the two-dimensional growth due to the active nitrogen species such as radical NH2 * generated by cracking ammonia molecule.

Original languageEnglish
Pages (from-to)2025-2028
Number of pages4
JournalJournal of Crystal Growth
Volume311
Issue number7
DOIs
Publication statusPublished - 2009 Mar 15

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Keywords

  • A1. Growth models
  • A1. Surface processes
  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Kawaharazuka, A., Yoshizaki, T., Ploog, K. H., & Horikoshi, Y. (2009). Growth of GaN with warm ammonia by molecular beam epitaxy. Journal of Crystal Growth, 311(7), 2025-2028. https://doi.org/10.1016/j.jcrysgro.2008.12.024