Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata*, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, Naoto Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50 - 100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approx.28% for E i = 100 eV and approx.18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsD.E. Alexander, N.W. Cheung, B. Park, W. Skorupa
PublisherMaterials Research Society
Pages393-398
Number of pages6
Volume438
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 5

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/296/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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