Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, Naoto Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50 - 100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approx.28% for E i = 100 eV and approx.18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsD.E. Alexander, N.W. Cheung, B. Park, W. Skorupa
PublisherMaterials Research Society
Pages393-398
Number of pages6
Volume438
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 5

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/296/12/5

Fingerprint

Molecular beam epitaxy
Ion beams
Molecular beams
Lattice vibrations
Ion bombardment
Raman spectroscopy
Solid solutions
Single crystals
Ions
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., ... Uekusa, S. (1996). Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method In D. E. Alexander, N. W. Cheung, B. Park, & W. Skorupa (Eds.), Materials Research Society Symposium - Proceedings (Vol. 438, pp. 393-398). Materials Research Society.

Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method . / Shibata, H.; Kimura, S.; Fons, P.; Yamada, A.; Makita, Y.; Obara, A.; Kobayashi, Naoto; Takahashi, H.; Katsumata, H.; Tanabe, J.; Uekusa, S.

Materials Research Society Symposium - Proceedings. ed. / D.E. Alexander; N.W. Cheung; B. Park; W. Skorupa. Vol. 438 Materials Research Society, 1996. p. 393-398.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shibata, H, Kimura, S, Fons, P, Yamada, A, Makita, Y, Obara, A, Kobayashi, N, Takahashi, H, Katsumata, H, Tanabe, J & Uekusa, S 1996, Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method in DE Alexander, NW Cheung, B Park & W Skorupa (eds), Materials Research Society Symposium - Proceedings. vol. 438, Materials Research Society, pp. 393-398, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 96/12/2.
Shibata H, Kimura S, Fons P, Yamada A, Makita Y, Obara A et al. Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method In Alexander DE, Cheung NW, Park B, Skorupa W, editors, Materials Research Society Symposium - Proceedings. Vol. 438. Materials Research Society. 1996. p. 393-398
Shibata, H. ; Kimura, S. ; Fons, P. ; Yamada, A. ; Makita, Y. ; Obara, A. ; Kobayashi, Naoto ; Takahashi, H. ; Katsumata, H. ; Tanabe, J. ; Uekusa, S. / Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method Materials Research Society Symposium - Proceedings. editor / D.E. Alexander ; N.W. Cheung ; B. Park ; W. Skorupa. Vol. 438 Materials Research Society, 1996. pp. 393-398
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AU - Shibata, H.

AU - Kimura, S.

AU - Fons, P.

AU - Yamada, A.

AU - Makita, Y.

AU - Obara, A.

AU - Kobayashi, Naoto

AU - Takahashi, H.

AU - Katsumata, H.

AU - Tanabe, J.

AU - Uekusa, S.

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AB - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50 - 100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approx.28% for E i = 100 eV and approx.18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

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