Growth of Ge
            1-xC
            x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata; S. Kimura; P. Fons; A. Yamada; Y. Makita; A. Obara; Naoto Kobayashi; H. Takahashi; H. Katsumata; J. Tanabe; S. Uekusa

Growth of Ge _1-xC _x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata^*, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, Naoto Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge _1-xC _x alloy on Si(100) using a low-energy (50-100 eV) C ⁺ ion beam and a Ge molecular beam. Metastable Ge _1-xC _x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge _1-xC _x alloys. It was also revealed that the sticking coefficient of C ⁺ ions into Ge was approximately 28% for E _i = 100 eV and approximately 18% for E _i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	I.M. Robertson, G.S. Was, L.W. Hobbs, T.D. de la Rubia
Publisher	Materials Research Society
Pages	233-238
Number of pages	6
Volume	439
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 5

Other

Other	Proceedings of the 1996 MRS Fall Symposium
City	Boston, MA, USA
Period	96/12/2 → 96/12/5

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., Kobayashi, N., Takahashi, H., Katsumata, H., Tanabe, J., & Uekusa, S. (1997). Growth of Ge _1-xC _x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method In I. M. Robertson, G. S. Was, L. W. Hobbs, & T. D. de la Rubia (Eds.), Materials Research Society Symposium - Proceedings (Vol. 439, pp. 233-238). Materials Research Society.

Growth of Ge _1-xC _x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method . / Shibata, H.; Kimura, S.; Fons, P. et al.

Materials Research Society Symposium - Proceedings. ed. / I.M. Robertson; G.S. Was; L.W. Hobbs; T.D. de la Rubia. Vol. 439 Materials Research Society, 1997. p. 233-238.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Shibata, H, Kimura, S, Fons, P, Yamada, A, Makita, Y, Obara, A, Kobayashi, N, Takahashi, H, Katsumata, H, Tanabe, J & Uekusa, S 1997, Growth of Ge _1-xC _x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method in IM Robertson, GS Was, LW Hobbs & TD de la Rubia (eds), Materials Research Society Symposium - Proceedings. vol. 439, Materials Research Society, pp. 233-238, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 96/12/2.

@inproceedings{bc6f726f3971408696212cb60298af1d,

title = "Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method ",

abstract = "A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50-100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approximately 28% for E i = 100 eV and approximately 18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage. ",

author = "H. Shibata and S. Kimura and P. Fons and A. Yamada and Y. Makita and A. Obara and Naoto Kobayashi and H. Takahashi and H. Katsumata and J. Tanabe and S. Uekusa",

year = "1997",

language = "English",

volume = "439",

pages = "233--238",

editor = "I.M. Robertson and G.S. Was and L.W. Hobbs and {de la Rubia}, T.D.",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 05-12-1996",

}

TY - GEN

T1 - Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

AU - Shibata, H.

AU - Kimura, S.

AU - Fons, P.

AU - Yamada, A.

AU - Makita, Y.

AU - Obara, A.

AU - Kobayashi, Naoto

AU - Takahashi, H.

AU - Katsumata, H.

AU - Tanabe, J.

AU - Uekusa, S.

PY - 1997

Y1 - 1997

N2 - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50-100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approximately 28% for E i = 100 eV and approximately 18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

AB - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50-100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approximately 28% for E i = 100 eV and approximately 18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

UR - http://www.scopus.com/inward/record.url?scp=0030682003&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030682003&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0030682003

VL - 439

SP - 233

EP - 238

BT - Materials Research Society Symposium - Proceedings

A2 - Robertson, I.M.

A2 - Was, G.S.

A2 - Hobbs, L.W.

A2 - de la Rubia, T.D.

PB - Materials Research Society

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 5 December 1996

ER -

Growth of Ge _1-xC _x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

Abstract

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