Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata*, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, Naoto Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science

Chemical Compounds