Growth of heavily boron-doped polycrystalline superconducting diamond

Hitoshi Umezawa, Tomohiro Takenouchi, Kensaku Kobayashi, Yoshihiko Takano, Masanori Nagao, Minoru Tachiki, Takeshi Hatano, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    15 Citations (Scopus)

    Abstract

    The introduction of a high concentration of boron into polycrystalline diamond films is realized by the chemical vapor deposition of the films. The growth parameter a, which is determined as the growth direction, depends on growth conditions such as the methane concentrations and B/C ratio. With an increase in methane concentration or B/C ratio, 〈111〉-faceted growth is frequently observed. From X-ray diffraction measurement, the 〈111〉-textured growth of the film is confirmed under high-α conditions. The diamond film grown, which has an extremely low resistivity (1.23 mΩ·cm), shows a transition to superconductivity at 5.6 K. For films grown under high-α conditions, for which the surface energy of the {111} face is low, a higher Tc is observed.

    Original languageEnglish
    Pages (from-to)1-10
    Number of pages10
    JournalNew Diamond and Frontier Carbon Technology
    Volume17
    Issue number1
    Publication statusPublished - 2007

    Fingerprint

    Diamond
    Boron
    Diamonds
    boron
    diamonds
    Diamond films
    Methane
    diamond films
    methane
    Superconductivity
    Interfacial energy
    surface energy
    Chemical vapor deposition
    superconductivity
    vapor deposition
    X ray diffraction
    electrical resistivity
    diffraction
    x rays

    Keywords

    • Diamond
    • Heavily boron-doped
    • Superconductivity
    • Transition temperature

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films
    • Surfaces and Interfaces
    • Materials Science(all)

    Cite this

    Umezawa, H., Takenouchi, T., Kobayashi, K., Takano, Y., Nagao, M., Tachiki, M., ... Kawarada, H. (2007). Growth of heavily boron-doped polycrystalline superconducting diamond. New Diamond and Frontier Carbon Technology, 17(1), 1-10.

    Growth of heavily boron-doped polycrystalline superconducting diamond. / Umezawa, Hitoshi; Takenouchi, Tomohiro; Kobayashi, Kensaku; Takano, Yoshihiko; Nagao, Masanori; Tachiki, Minoru; Hatano, Takeshi; Kawarada, Hiroshi.

    In: New Diamond and Frontier Carbon Technology, Vol. 17, No. 1, 2007, p. 1-10.

    Research output: Contribution to journalArticle

    Umezawa, H, Takenouchi, T, Kobayashi, K, Takano, Y, Nagao, M, Tachiki, M, Hatano, T & Kawarada, H 2007, 'Growth of heavily boron-doped polycrystalline superconducting diamond', New Diamond and Frontier Carbon Technology, vol. 17, no. 1, pp. 1-10.
    Umezawa H, Takenouchi T, Kobayashi K, Takano Y, Nagao M, Tachiki M et al. Growth of heavily boron-doped polycrystalline superconducting diamond. New Diamond and Frontier Carbon Technology. 2007;17(1):1-10.
    Umezawa, Hitoshi ; Takenouchi, Tomohiro ; Kobayashi, Kensaku ; Takano, Yoshihiko ; Nagao, Masanori ; Tachiki, Minoru ; Hatano, Takeshi ; Kawarada, Hiroshi. / Growth of heavily boron-doped polycrystalline superconducting diamond. In: New Diamond and Frontier Carbon Technology. 2007 ; Vol. 17, No. 1. pp. 1-10.
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    AU - Nagao, Masanori

    AU - Tachiki, Minoru

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