Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE

H. Umeya, K. Kitamura, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

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13 Citations (Scopus)

Abstract

The realization of wurtzite structure II-VI material would overcome the problem associated with the lifetime of the devices. ZnCdS epilayers were grown on GaAs(0 0 1) and (1 1 1)B substrates, and crystal structure was controlled. ZnCdS epilayers grown on GaAs(0 0 1) substrates showed slight signs of the wurtzite phase. Phi (φ) scan of the X-ray diffraction was performed, and ZnCdS epilayers grown on GaAs(1 1 1)B substrates showed mixed crystal structures. The substrate temperature and the Cl doping would affect the volume ratio of the wurtzite structure.

Original languageEnglish
Pages (from-to)192-196
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Umeya, H., Kitamura, K., Jia, A., Shimotomai, M., Kato, Y., Kobayashi, M., Yoshikawa, A., & Takahashi, K. (2000). Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE. Journal of Crystal Growth, 214, 192-196. https://doi.org/10.1016/S0022-0248(00)00074-9