TY - JOUR
T1 - Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE
AU - Umeya, H.
AU - Kitamura, K.
AU - Jia, A.
AU - Shimotomai, M.
AU - Kato, Y.
AU - Kobayashi, M.
AU - Yoshikawa, A.
AU - Takahashi, K.
N1 - Funding Information:
This work was supported in part by RFTF of JSPS (96R16201), and in part by a Grant in Aid for Scientific Research from the Ministry of Education and Culture.
PY - 2000/6/2
Y1 - 2000/6/2
N2 - The realization of wurtzite structure II-VI material would overcome the problem associated with the lifetime of the devices. ZnCdS epilayers were grown on GaAs(0 0 1) and (1 1 1)B substrates, and crystal structure was controlled. ZnCdS epilayers grown on GaAs(0 0 1) substrates showed slight signs of the wurtzite phase. Phi (φ) scan of the X-ray diffraction was performed, and ZnCdS epilayers grown on GaAs(1 1 1)B substrates showed mixed crystal structures. The substrate temperature and the Cl doping would affect the volume ratio of the wurtzite structure.
AB - The realization of wurtzite structure II-VI material would overcome the problem associated with the lifetime of the devices. ZnCdS epilayers were grown on GaAs(0 0 1) and (1 1 1)B substrates, and crystal structure was controlled. ZnCdS epilayers grown on GaAs(0 0 1) substrates showed slight signs of the wurtzite phase. Phi (φ) scan of the X-ray diffraction was performed, and ZnCdS epilayers grown on GaAs(1 1 1)B substrates showed mixed crystal structures. The substrate temperature and the Cl doping would affect the volume ratio of the wurtzite structure.
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U2 - 10.1016/S0022-0248(00)00074-9
DO - 10.1016/S0022-0248(00)00074-9
M3 - Conference article
AN - SCOPUS:0033691704
SN - 0022-0248
VL - 214
SP - 192
EP - 196
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - The 9th International Conference on II-VI Compounds
Y2 - 1 November 1999 through 5 November 1999
ER -