Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE

H. Umeya, K. Kitamura, A. Jia, M. Shimotomai, Y. Kato, Masakazu Kobayashi, A. Yoshikawa, K. Takahashi

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The realization of wurtzite structure II-VI material would overcome the problem associated with the lifetime of the devices. ZnCdS epilayers were grown on GaAs(0 0 1) and (1 1 1)B substrates, and crystal structure was controlled. ZnCdS epilayers grown on GaAs(0 0 1) substrates showed slight signs of the wurtzite phase. Phi (φ) scan of the X-ray diffraction was performed, and ZnCdS epilayers grown on GaAs(1 1 1)B substrates showed mixed crystal structures. The substrate temperature and the Cl doping would affect the volume ratio of the wurtzite structure.

Original languageEnglish
Pages (from-to)192-196
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
Externally publishedYes

Fingerprint

Molecular beam epitaxy
Epilayers
wurtzite
Substrates
Crystal structure
crystal structure
mixed crystals
Doping (additives)
X ray diffraction
life (durability)
gallium arsenide
diffraction
x rays
Temperature
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Umeya, H., Kitamura, K., Jia, A., Shimotomai, M., Kato, Y., Kobayashi, M., ... Takahashi, K. (2000). Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE. Journal of Crystal Growth, 214, 192-196. https://doi.org/10.1016/S0022-0248(00)00074-9

Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE. / Umeya, H.; Kitamura, K.; Jia, A.; Shimotomai, M.; Kato, Y.; Kobayashi, Masakazu; Yoshikawa, A.; Takahashi, K.

In: Journal of Crystal Growth, Vol. 214, 02.06.2000, p. 192-196.

Research output: Contribution to journalArticle

Umeya, H, Kitamura, K, Jia, A, Shimotomai, M, Kato, Y, Kobayashi, M, Yoshikawa, A & Takahashi, K 2000, 'Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE', Journal of Crystal Growth, vol. 214, pp. 192-196. https://doi.org/10.1016/S0022-0248(00)00074-9
Umeya, H. ; Kitamura, K. ; Jia, A. ; Shimotomai, M. ; Kato, Y. ; Kobayashi, Masakazu ; Yoshikawa, A. ; Takahashi, K. / Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE. In: Journal of Crystal Growth. 2000 ; Vol. 214. pp. 192-196.
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