Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy

A. Usui, H. Goto, T. Nakagawa, H. Sunakawa, T. Matsueda, A. Okada, Jun Mizuno, A. A. Yamaguchi, H. Shinohara, H. Goto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN is an attractive material in power devices for energy-saving measures in consumer products, automobiles, and industrial machines. To realize such GaN devices, however, high-quality GaN substrates are indispensable. In this paper, we describe the growth of high-crystalline-quality GaN template by HVPE with the nano-FIELO technique, where GaN growth starts by forming facet structures on nanometer-size channels which are opened on SiO 2 layer deposited on GaN/sapphire substrate. The lattice pattern consisting of 500 nm × 500 nm square SiO 2 masks surrounded by 80-nm-wide channels is used in this study. A nanoimprinting technique is applied followed by dry etching to fabricate lattice channels. From cross-sectional TEM observation, it is shown that the dislocation density is significantly reduced by the lattice pattern. Uniform GaN growth over 2-inch-diameter wafer is realized.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages25-31
Number of pages7
Volume58
Edition4
DOIs
Publication statusPublished - 2013

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Usui, A., Goto, H., Nakagawa, T., Sunakawa, H., Matsueda, T., Okada, A., Mizuno, J., Yamaguchi, A. A., Shinohara, H., & Goto, H. (2013). Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy. In ECS Transactions (4 ed., Vol. 58, pp. 25-31). Electrochemical Society Inc.. https://doi.org/10.1149/05804.0025ecst