Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy

A. Usui, H. Goto, T. Nakagawa, H. Sunakawa, T. Matsueda, A. Okada, Jun Mizuno, A. A. Yamaguchi, H. Shinohara, H. Goto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaN is an attractive material in power devices for energy-saving measures in consumer products, automobiles, and industrial machines. To realize such GaN devices, however, high-quality GaN substrates are indispensable. In this paper, we describe the growth of high-crystalline-quality GaN template by HVPE with the nano-FIELO technique, where GaN growth starts by forming facet structures on nanometer-size channels which are opened on SiO 2 layer deposited on GaN/sapphire substrate. The lattice pattern consisting of 500 nm × 500 nm square SiO 2 masks surrounded by 80-nm-wide channels is used in this study. A nanoimprinting technique is applied followed by dry etching to fabricate lattice channels. From cross-sectional TEM observation, it is shown that the dislocation density is significantly reduced by the lattice pattern. Uniform GaN growth over 2-inch-diameter wafer is realized.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages25-31
Number of pages7
Volume58
Edition4
DOIs
Publication statusPublished - 2013

Fingerprint

Vapor phase epitaxy
Hydrides
Dry etching
Consumer products
Substrates
Sapphire
Automobiles
Masks
Energy conservation
Crystalline materials
Transmission electron microscopy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Usui, A., Goto, H., Nakagawa, T., Sunakawa, H., Matsueda, T., Okada, A., ... Goto, H. (2013). Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy. In ECS Transactions (4 ed., Vol. 58, pp. 25-31). Electrochemical Society Inc.. https://doi.org/10.1149/05804.0025ecst

Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy. / Usui, A.; Goto, H.; Nakagawa, T.; Sunakawa, H.; Matsueda, T.; Okada, A.; Mizuno, Jun; Yamaguchi, A. A.; Shinohara, H.; Goto, H.

ECS Transactions. Vol. 58 4. ed. Electrochemical Society Inc., 2013. p. 25-31.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Usui, A, Goto, H, Nakagawa, T, Sunakawa, H, Matsueda, T, Okada, A, Mizuno, J, Yamaguchi, AA, Shinohara, H & Goto, H 2013, Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy. in ECS Transactions. 4 edn, vol. 58, Electrochemical Society Inc., pp. 25-31. https://doi.org/10.1149/05804.0025ecst
Usui A, Goto H, Nakagawa T, Sunakawa H, Matsueda T, Okada A et al. Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy. In ECS Transactions. 4 ed. Vol. 58. Electrochemical Society Inc. 2013. p. 25-31 https://doi.org/10.1149/05804.0025ecst
Usui, A. ; Goto, H. ; Nakagawa, T. ; Sunakawa, H. ; Matsueda, T. ; Okada, A. ; Mizuno, Jun ; Yamaguchi, A. A. ; Shinohara, H. ; Goto, H. / Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy. ECS Transactions. Vol. 58 4. ed. Electrochemical Society Inc., 2013. pp. 25-31
@inproceedings{009f0a10cc82441fb42a22905be1af32,
title = "Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy",
abstract = "GaN is an attractive material in power devices for energy-saving measures in consumer products, automobiles, and industrial machines. To realize such GaN devices, however, high-quality GaN substrates are indispensable. In this paper, we describe the growth of high-crystalline-quality GaN template by HVPE with the nano-FIELO technique, where GaN growth starts by forming facet structures on nanometer-size channels which are opened on SiO 2 layer deposited on GaN/sapphire substrate. The lattice pattern consisting of 500 nm × 500 nm square SiO 2 masks surrounded by 80-nm-wide channels is used in this study. A nanoimprinting technique is applied followed by dry etching to fabricate lattice channels. From cross-sectional TEM observation, it is shown that the dislocation density is significantly reduced by the lattice pattern. Uniform GaN growth over 2-inch-diameter wafer is realized.",
author = "A. Usui and H. Goto and T. Nakagawa and H. Sunakawa and T. Matsueda and A. Okada and Jun Mizuno and Yamaguchi, {A. A.} and H. Shinohara and H. Goto",
year = "2013",
doi = "10.1149/05804.0025ecst",
language = "English",
volume = "58",
pages = "25--31",
booktitle = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
edition = "4",

}

TY - GEN

T1 - Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy

AU - Usui, A.

AU - Goto, H.

AU - Nakagawa, T.

AU - Sunakawa, H.

AU - Matsueda, T.

AU - Okada, A.

AU - Mizuno, Jun

AU - Yamaguchi, A. A.

AU - Shinohara, H.

AU - Goto, H.

PY - 2013

Y1 - 2013

N2 - GaN is an attractive material in power devices for energy-saving measures in consumer products, automobiles, and industrial machines. To realize such GaN devices, however, high-quality GaN substrates are indispensable. In this paper, we describe the growth of high-crystalline-quality GaN template by HVPE with the nano-FIELO technique, where GaN growth starts by forming facet structures on nanometer-size channels which are opened on SiO 2 layer deposited on GaN/sapphire substrate. The lattice pattern consisting of 500 nm × 500 nm square SiO 2 masks surrounded by 80-nm-wide channels is used in this study. A nanoimprinting technique is applied followed by dry etching to fabricate lattice channels. From cross-sectional TEM observation, it is shown that the dislocation density is significantly reduced by the lattice pattern. Uniform GaN growth over 2-inch-diameter wafer is realized.

AB - GaN is an attractive material in power devices for energy-saving measures in consumer products, automobiles, and industrial machines. To realize such GaN devices, however, high-quality GaN substrates are indispensable. In this paper, we describe the growth of high-crystalline-quality GaN template by HVPE with the nano-FIELO technique, where GaN growth starts by forming facet structures on nanometer-size channels which are opened on SiO 2 layer deposited on GaN/sapphire substrate. The lattice pattern consisting of 500 nm × 500 nm square SiO 2 masks surrounded by 80-nm-wide channels is used in this study. A nanoimprinting technique is applied followed by dry etching to fabricate lattice channels. From cross-sectional TEM observation, it is shown that the dislocation density is significantly reduced by the lattice pattern. Uniform GaN growth over 2-inch-diameter wafer is realized.

UR - http://www.scopus.com/inward/record.url?scp=84904878911&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904878911&partnerID=8YFLogxK

U2 - 10.1149/05804.0025ecst

DO - 10.1149/05804.0025ecst

M3 - Conference contribution

AN - SCOPUS:84904878911

VL - 58

SP - 25

EP - 31

BT - ECS Transactions

PB - Electrochemical Society Inc.

ER -