Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers

Takuro Fujii, Koji Takeda, Erina Kanno, Hidetaka Nishi, Koichi Hasebe, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO 2 /Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs grown on an InP template.

Original languageEnglish
Title of host publication2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509019649
DOIs
Publication statusPublished - 2016 Aug 1
Externally publishedYes
Event2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
Duration: 2016 Jun 262016 Jun 30

Publication series

Name2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
CountryJapan
CityToyama
Period16/6/2616/6/30

Fingerprint

Membranes
Metallorganic vapor phase epitaxy
Lasers
Epitaxial layers
Substrates
Demonstrations
Crystals

Keywords

  • direct bonding
  • epitaxial growth
  • semiconductor laser
  • silicon photonics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Fujii, T., Takeda, K., Kanno, E., Nishi, H., Hasebe, K., Yamamoto, T., ... Matsuo, S. (2016). Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 [7528823] (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2016.7528823

Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers. / Fujii, Takuro; Takeda, Koji; Kanno, Erina; Nishi, Hidetaka; Hasebe, Koichi; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7528823 (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fujii, T, Takeda, K, Kanno, E, Nishi, H, Hasebe, K, Yamamoto, T, Kakitsuka, T & Matsuo, S 2016, Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers. in 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016., 7528823, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Compound Semiconductor Week, CSW 2016, Toyama, Japan, 16/6/26. https://doi.org/10.1109/ICIPRM.2016.7528823
Fujii T, Takeda K, Kanno E, Nishi H, Hasebe K, Yamamoto T et al. Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers. In 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7528823. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016). https://doi.org/10.1109/ICIPRM.2016.7528823
Fujii, Takuro ; Takeda, Koji ; Kanno, Erina ; Nishi, Hidetaka ; Hasebe, Koichi ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers. 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016).
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AU - Hasebe, Koichi

AU - Yamamoto, Tsuyoshi

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