Growth of large diameter 4H-SiC by TSSG technique

K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, K. Kamei, M. Kado, H. Daikoku, H. Sakamoto, H. Suzuki, T. Bessho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called "Immersion Guide (IG)" which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages65-68
Number of pages4
Volume740-742
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012 - St. Petersburg, Russian Federation
Duration: 2012 Sep 22012 Sep 6

Publication series

NameMaterials Science Forum
Volume740-742
ISSN (Print)02555476

Other

Other9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
CountryRussian Federation
CitySt. Petersburg
Period12/9/212/9/6

Keywords

  • 3-inch
  • 4H-SiC
  • Convection
  • Immersion guide
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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  • Cite this

    Kusunoki, K., Yashiro, N., Okada, N., Moriguchi, K., Kamei, K., Kado, M., Daikoku, H., Sakamoto, H., Suzuki, H., & Bessho, T. (2013). Growth of large diameter 4H-SiC by TSSG technique. In Materials Science Forum (Vol. 740-742, pp. 65-68). (Materials Science Forum; Vol. 740-742). https://doi.org/10.4028/www.scientific.net/MSF.740-742.65