Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Toshiki Makimoto; Kazuhide Kumakura

doi:10.1002/ecjb.20216

Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Research output: Contribution to journal › Article › peer-review

Abstract

Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

Original language	English
Pages (from-to)	20-25
Number of pages	6
Journal	Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume	89
Issue number	3
DOIs	https://doi.org/10.1002/ecjb.20216
Publication status	Published - 2006 Mar 1
Externally published	Yes

Keywords

Extrinsic base regrowth
Heterojunction bipolar transistor (HBT)
High-power electronics
Nitride semiconductor
p-type InGaN

ASJC Scopus subject areas

Physics and Astronomy(all)
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1002/ecjb.20216

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@article{14b81ea0d9f844fb9bcdf488b25fba3f,

title = "Growth of nitride semiconductors and its application to heterojunction bipolar transistors",

abstract = "Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.",

keywords = "Extrinsic base regrowth, Heterojunction bipolar transistor (HBT), High-power electronics, Nitride semiconductor, p-type InGaN",

author = "Toshiki Makimoto and Kazuhide Kumakura",

year = "2006",

month = mar,

day = "1",

doi = "10.1002/ecjb.20216",

language = "English",

volume = "89",

pages = "20--25",

journal = "Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)",

issn = "8756-663X",

publisher = "Scripta Technica",

number = "3",

}

TY - JOUR

T1 - Growth of nitride semiconductors and its application to heterojunction bipolar transistors

AU - Makimoto, Toshiki

AU - Kumakura, Kazuhide

PY - 2006/3/1

Y1 - 2006/3/1

N2 - Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

AB - Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

KW - Extrinsic base regrowth

KW - Heterojunction bipolar transistor (HBT)

KW - High-power electronics

KW - Nitride semiconductor

KW - p-type InGaN

UR - http://www.scopus.com/inward/record.url?scp=33645112396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645112396&partnerID=8YFLogxK

U2 - 10.1002/ecjb.20216

DO - 10.1002/ecjb.20216

M3 - Article

AN - SCOPUS:33645112396

VL - 89

SP - 20

EP - 25

JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

SN - 8756-663X

IS - 3

ER -