Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura

Research output: Contribution to journalArticle

Abstract

Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

Original languageEnglish
Pages (from-to)20-25
Number of pages6
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume89
Issue number3
DOIs
Publication statusPublished - 2006 Mar
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
Nitrides
nitrides
heterojunctions
Semiconductor materials
high current
High temperature applications
Electric potential
low currents
Power electronics
Electric breakdown
electrical faults
accumulators
low voltage
Energy gap
Current density
current density
Fabrication
fabrication

Keywords

  • Extrinsic base regrowth
  • Heterojunction bipolar transistor (HBT)
  • High-power electronics
  • Nitride semiconductor
  • p-type InGaN

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

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abstract = "Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.",
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AU - Kumakura, Kazuhide

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AB - Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

KW - Extrinsic base regrowth

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KW - p-type InGaN

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