Abstract
Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.
Original language | English |
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Pages (from-to) | 20-25 |
Number of pages | 6 |
Journal | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
Volume | 89 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2006 Mar 1 |
Externally published | Yes |
Keywords
- Extrinsic base regrowth
- Heterojunction bipolar transistor (HBT)
- High-power electronics
- Nitride semiconductor
- p-type InGaN
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Computer Networks and Communications
- Electrical and Electronic Engineering