Abstract
Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 20-25 |
| Number of pages | 6 |
| Journal | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
| Volume | 89 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2006 Mar |
| Externally published | Yes |
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Keywords
- Extrinsic base regrowth
- Heterojunction bipolar transistor (HBT)
- High-power electronics
- Nitride semiconductor
- p-type InGaN
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Growth of nitride semiconductors and its application to heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, Kazuhide.
In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 89, No. 3, 03.2006, p. 20-25.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth of nitride semiconductors and its application to heterojunction bipolar transistors
AU - Makimoto, Toshiki
AU - Kumakura, Kazuhide
PY - 2006/3
Y1 - 2006/3
N2 - Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.
AB - Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.
KW - Extrinsic base regrowth
KW - Heterojunction bipolar transistor (HBT)
KW - High-power electronics
KW - Nitride semiconductor
KW - p-type InGaN
UR - http://www.scopus.com/inward/record.url?scp=33645112396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33645112396&partnerID=8YFLogxK
U2 - 10.1002/ecjb.20216
DO - 10.1002/ecjb.20216
M3 - Article
AN - SCOPUS:33645112396
VL - 89
SP - 20
EP - 25
JO - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
JF - Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
SN - 8756-663X
IS - 3
ER -