Growth of nonpolar AlN (11 2- 0) and (1 1- 00) films on SiC substrates by flow-rate modulation epitaxy

Tetsuya Akasaka, Yasuyuki Kobayashi, Toshiki Makimoto

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Nonpolar AlN (11 2- 0) and (1 1- 00) films were grown on SiC substrates by flow-rate modulation epitaxy (FME), wherein trimethylaluminum and N H3 were alternately supplied. FME provides both AlN (11 2- 0) and (1 1- 00) films with good crystallinity and smooth surfaces, whereas AlN (1 1- 00) films obtained by conventional metal-organic chemical vapor deposition exhibit poor crystallinity and rough surfaces with deep trenches consisting of (000 1-) and (1 1- 01) N-face microfacets. FME effectively eliminates these trenches, because the microfacets are unstable and have faster growth rates because of the enhanced migration of Al atoms in the absence of excess N surface coverage under the Al-rich condition.

Original languageEnglish
Article number121919
JournalApplied Physics Letters
Volume90
Issue number12
DOIs
Publication statusPublished - 2007
Externally publishedYes

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epitaxy
flow velocity
modulation
crystallinity
metalorganic chemical vapor deposition
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth of nonpolar AlN (11 2- 0) and (1 1- 00) films on SiC substrates by flow-rate modulation epitaxy. / Akasaka, Tetsuya; Kobayashi, Yasuyuki; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 90, No. 12, 121919, 2007.

Research output: Contribution to journalArticle

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