Growth of Si
            1-xSn
            x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)

Naoto Kobayashi; M. Hasegawa; N. Hayashi; H. Katsumata; Y. Makita; H. Shibata; S. Uekusa

Growth of Si _1-xSn _x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)

Naoto Kobayashi^*, M. Hasegawa, N. Hayashi, H. Katsumata, Y. Makita, H. Shibata, S. Uekusa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

This paper presents the results of formation of metastable alloy semiconductor layers of Si _1-xSn _x Si (100) grown by the ion-beam-induced epitaxial crystallization process and their structural properties compared with those for the same layers grown by the solid phase epitaxial growth process. Optical properties that are relevant to defects in the crystallized layers are also presented.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	207-212
Number of pages	6
Volume	396
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Kobayashi, N., Hasegawa, M., Hayashi, N., Katsumata, H., Makita, Y., Shibata, H., & Uekusa, S. (1996). Growth of Si _1-xSn _x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) In Materials Research Society Symposium - Proceedings (Vol. 396, pp. 207-212). Materials Research Society.

Growth of Si _1-xSn _x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) . / Kobayashi, Naoto; Hasegawa, M.; Hayashi, N. et al.

Materials Research Society Symposium - Proceedings. Vol. 396 Materials Research Society, 1996. p. 207-212.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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abstract = "This paper presents the results of formation of metastable alloy semiconductor layers of Si 1-xSn x Si (100) grown by the ion-beam-induced epitaxial crystallization process and their structural properties compared with those for the same layers grown by the solid phase epitaxial growth process. Optical properties that are relevant to defects in the crystallized layers are also presented. ",

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AU - Kobayashi, Naoto

AU - Hasegawa, M.

AU - Hayashi, N.

AU - Katsumata, H.

AU - Makita, Y.

AU - Shibata, H.

AU - Uekusa, S.

PY - 1996

Y1 - 1996

N2 - This paper presents the results of formation of metastable alloy semiconductor layers of Si 1-xSn x Si (100) grown by the ion-beam-induced epitaxial crystallization process and their structural properties compared with those for the same layers grown by the solid phase epitaxial growth process. Optical properties that are relevant to defects in the crystallized layers are also presented.

AB - This paper presents the results of formation of metastable alloy semiconductor layers of Si 1-xSn x Si (100) grown by the ion-beam-induced epitaxial crystallization process and their structural properties compared with those for the same layers grown by the solid phase epitaxial growth process. Optical properties that are relevant to defects in the crystallized layers are also presented.

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BT - Materials Research Society Symposium - Proceedings

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ER -

Growth of Si _1-xSn _x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)

Abstract

ASJC Scopus subject areas

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