Growth of Si 1-xSn x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG)

Naoto Kobayashi, M. Hasegawa, N. Hayashi, H. Katsumata, Y. Makita, H. Shibata, S. Uekusa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper presents the results of formation of metastable alloy semiconductor layers of Si 1-xSn x Si (100) grown by the ion-beam-induced epitaxial crystallization process and their structural properties compared with those for the same layers grown by the solid phase epitaxial growth process. Optical properties that are relevant to defects in the crystallized layers are also presented.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages207-212
Number of pages6
Volume396
Publication statusPublished - 1996
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kobayashi, N., Hasegawa, M., Hayashi, N., Katsumata, H., Makita, Y., Shibata, H., & Uekusa, S. (1996). Growth of Si 1-xSn x layers on Si by ion-beam-induced epitaxial crystallization (IBIEC) and solid phase epitaxial growth (SPEG) In Materials Research Society Symposium - Proceedings (Vol. 396, pp. 207-212). Materials Research Society.