Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution

Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara, Kazuo Nakajima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6μm/hr (12μm/hr) while that from the self-flux was only 2μm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages115-118
Number of pages4
Volume527-529
EditionPART 1
Publication statusPublished - 2006
Externally publishedYes
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: 2005 Sep 182005 Sep 23

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)02555476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period05/9/1805/9/23

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Keywords

  • 6H-SiC
  • CALPHAD
  • Carbon solubility
  • Solution growth
  • Ternary solution

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Yashiro, N., Kusunoki, K., Kamei, K., Hasebe, M., Ujihara, T., & Nakajima, K. (2006). Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution. In Materials Science Forum (PART 1 ed., Vol. 527-529, pp. 115-118). (Materials Science Forum; Vol. 527-529, No. PART 1).