Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

Morio Wada, Shojiro Araki, Takahiro Kudou, Toshitsugu Ueda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of strain-balanced (SB) InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-infrared photodetectors was presented. Metallorganic vapor phase epitaxy was used to grow the samples on (100) InP substrates. The MQW structures consisted of a twenty-period thickness of an InAs0.63P0.37 well with a lattice mismatch of +2.0%. Secondary electron microscope (SEM) and high-resolution X-ray diffraction (HR-XRD) were used to image and analyze the cleaved and strained cross section of the sample. Results suggested that propagation of strain in InP barriers affected the interface quality of the strained layers grown on InP barriers.

Original languageEnglish
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume1
Publication statusPublished - 2001
Externally publishedYes
Event4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba
Duration: 2001 Jul 152001 Jul 19

Other

Other4th Pacific Rim Conference on Lasers and Electro-Optics
CityChiba
Period01/7/1501/7/19

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wada, M., Araki, S., Kudou, T., & Ueda, T. (2001). Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (Vol. 1)