Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

Morio Wada; Shojiro Araki; Takahiro Kudou; Toshitsugu Ueda

Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

Morio Wada^*, Shojiro Araki, Takahiro Kudou, Toshitsugu Ueda

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The growth of strain-balanced (SB) InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-infrared photodetectors was presented. Metallorganic vapor phase epitaxy was used to grow the samples on (100) InP substrates. The MQW structures consisted of a twenty-period thickness of an InAs_0.63P_0.37 well with a lattice mismatch of +2.0%. Secondary electron microscope (SEM) and high-resolution X-ray diffraction (HR-XRD) were used to image and analyze the cleaved and strained cross section of the sample. Results suggested that propagation of strain in InP barriers affected the interface quality of the strained layers grown on InP barriers.

Original language	English
Title of host publication	Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume	1
Publication status	Published - 2001
Externally published	Yes
Event	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba Duration: 2001 Jul 15 → 2001 Jul 19

Other

Other	4th Pacific Rim Conference on Lasers and Electro-Optics
City	Chiba
Period	01/7/15 → 01/7/19

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

@inproceedings{826f40870f6a46ae94b84b31d99b204b,

title = "Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors",

abstract = "The growth of strain-balanced (SB) InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-infrared photodetectors was presented. Metallorganic vapor phase epitaxy was used to grow the samples on (100) InP substrates. The MQW structures consisted of a twenty-period thickness of an InAs0.63P0.37 well with a lattice mismatch of +2.0%. Secondary electron microscope (SEM) and high-resolution X-ray diffraction (HR-XRD) were used to image and analyze the cleaved and strained cross section of the sample. Results suggested that propagation of strain in InP barriers affected the interface quality of the strained layers grown on InP barriers.",

author = "Morio Wada and Shojiro Araki and Takahiro Kudou and Toshitsugu Ueda",

year = "2001",

language = "English",

volume = "1",

booktitle = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",

note = "4th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 15-07-2001 Through 19-07-2001",

}

TY - GEN

T1 - Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

AU - Wada, Morio

AU - Araki, Shojiro

AU - Kudou, Takahiro

AU - Ueda, Toshitsugu

PY - 2001

Y1 - 2001

N2 - The growth of strain-balanced (SB) InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-infrared photodetectors was presented. Metallorganic vapor phase epitaxy was used to grow the samples on (100) InP substrates. The MQW structures consisted of a twenty-period thickness of an InAs0.63P0.37 well with a lattice mismatch of +2.0%. Secondary electron microscope (SEM) and high-resolution X-ray diffraction (HR-XRD) were used to image and analyze the cleaved and strained cross section of the sample. Results suggested that propagation of strain in InP barriers affected the interface quality of the strained layers grown on InP barriers.

AB - The growth of strain-balanced (SB) InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-infrared photodetectors was presented. Metallorganic vapor phase epitaxy was used to grow the samples on (100) InP substrates. The MQW structures consisted of a twenty-period thickness of an InAs0.63P0.37 well with a lattice mismatch of +2.0%. Secondary electron microscope (SEM) and high-resolution X-ray diffraction (HR-XRD) were used to image and analyze the cleaved and strained cross section of the sample. Results suggested that propagation of strain in InP barriers affected the interface quality of the strained layers grown on InP barriers.

UR - http://www.scopus.com/inward/record.url?scp=0035693114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035693114&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0035693114

VL - 1

BT - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 15 July 2001 through 19 July 2001

ER -

Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

Abstract

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ASJC Scopus subject areas

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