Growth of ZnTe epilayers on r- and n-plane sapphire substrates

Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Masakazu Kobayashi

    Research output: Contribution to journalArticle

    8 Citations (Scopus)

    Abstract

    ZnTe epilayers were grown on r-plane (11¯02) and n-plane (112¯3) sapphire substrates by molecular beam epitaxy. The ZnTe domain distribution in the layer and the influence of the substrates' c-plane location on the orientation of the epilayer were studied by means of X-ray diffraction pole figure measurements. Computer simulation was used to analyze the diffraction patterns. The (100)-plane ZnTe was formed on the r-plane substrate whereas two different {111}-plane mixed with the (511) domain were formed on n-plane substrate, respectively. The orientation of ZnTe layers on r-plane sapphire substrates could not change even by varying the buffer layer growth condition. From these results, it was revealed that the relationship of the sapphire c-plane and the (111) ZnTe strongly affected the orientation of the film. ZnTe layers grown on n-plane sapphire substrates, on the other hand, exhibited different relationships and (111) of ZnTe was not aligned to the sapphire c-plane.

    Original languageEnglish
    Article number075501
    JournalJapanese Journal of Applied Physics
    Volume54
    Issue number7
    DOIs
    Publication statusPublished - 2015 Jul 1

    Fingerprint

    Epilayers
    Sapphire
    sapphire
    Substrates
    Buffer layers
    Molecular beam epitaxy
    Diffraction patterns
    Poles
    poles
    molecular beam epitaxy
    diffraction patterns
    buffers
    computerized simulation
    X ray diffraction
    Computer simulation
    diffraction
    x rays

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Growth of ZnTe epilayers on r- and n-plane sapphire substrates. / Nakasu, Taizo; Aiba, Takayuki; Yamashita, Sotaro; Hattori, Shota; Kizu, Takeru; Sun, Wei Che; Taguri, Kosuke; Kazami, Fukino; Kobayashi, Masakazu.

    In: Japanese Journal of Applied Physics, Vol. 54, No. 7, 075501, 01.07.2015.

    Research output: Contribution to journalArticle

    Nakasu, T, Aiba, T, Yamashita, S, Hattori, S, Kizu, T, Sun, WC, Taguri, K, Kazami, F & Kobayashi, M 2015, 'Growth of ZnTe epilayers on r- and n-plane sapphire substrates', Japanese Journal of Applied Physics, vol. 54, no. 7, 075501. https://doi.org/10.7567/JJAP.54.075501
    Nakasu T, Aiba T, Yamashita S, Hattori S, Kizu T, Sun WC et al. Growth of ZnTe epilayers on r- and n-plane sapphire substrates. Japanese Journal of Applied Physics. 2015 Jul 1;54(7). 075501. https://doi.org/10.7567/JJAP.54.075501
    Nakasu, Taizo ; Aiba, Takayuki ; Yamashita, Sotaro ; Hattori, Shota ; Kizu, Takeru ; Sun, Wei Che ; Taguri, Kosuke ; Kazami, Fukino ; Kobayashi, Masakazu. / Growth of ZnTe epilayers on r- and n-plane sapphire substrates. In: Japanese Journal of Applied Physics. 2015 ; Vol. 54, No. 7.
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