HALL EFFECT ANALYSIS OF CHARGE TRANSPORT IN SILICON DIOXIDE-SILICON NITRIDE DOUBLE LAYERS.

A. Hiraiwa, J. Yugami, S. Ihjima, T. Kusaka, Y. Ohji

Research output: Contribution to journalArticle

Abstract

A method to obtain respective fields in multilayers is proposed. The samples investigated are large-area n-channel transistors (L equals 1. 38 mm, W equals 1 mm) with Hall terminals, which have poly-Si (P-doped)/7. 5 nm-SiO//2 (thermally oxidized)/6. 3-nm-Si//3N//4/p-Si-substrate structures. In order to ensure steady-state conditions, the measurements were carried out 5 min. after decreasing gate voltage V//G stepwise. Magnetic field H (5. 2 kGauss) was imposed perpendicular to substrates. Hall voltage V//H is related to the surface charge density Q//s by Q//s equals rHI//D/V//H(r: Hall ratio, I//D: drain current). The nitride field E//Nis obtained as E//N equals (Q//D plus Q//S/ epsilon //N, where Q//D is depletion layer charge density, and epsilon //N is static dielectric constant of nitride. The oxide field E//0 is calculated as follows, assuming that the centroid of trapped charges Q//N in the nitride is at oxide-nitride interface.

Original languageEnglish
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number11
Publication statusPublished - 1987 Nov
Externally publishedYes

Fingerprint

Hall effect
Silicon nitride
silicon nitrides
Nitrides
Silicon Dioxide
nitrides
Charge transfer
Silica
silicon dioxide
Charge density
Oxides
oxides
Drain current
Electric potential
electric potential
Substrates
Surface charge
Polysilicon
centroids
Multilayers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

HALL EFFECT ANALYSIS OF CHARGE TRANSPORT IN SILICON DIOXIDE-SILICON NITRIDE DOUBLE LAYERS. / Hiraiwa, A.; Yugami, J.; Ihjima, S.; Kusaka, T.; Ohji, Y.

In: IEEE Transactions on Electron Devices, Vol. ED-34, No. 11, 11.1987.

Research output: Contribution to journalArticle

Hiraiwa, A, Yugami, J, Ihjima, S, Kusaka, T & Ohji, Y 1987, 'HALL EFFECT ANALYSIS OF CHARGE TRANSPORT IN SILICON DIOXIDE-SILICON NITRIDE DOUBLE LAYERS.', IEEE Transactions on Electron Devices, vol. ED-34, no. 11.
Hiraiwa, A. ; Yugami, J. ; Ihjima, S. ; Kusaka, T. ; Ohji, Y. / HALL EFFECT ANALYSIS OF CHARGE TRANSPORT IN SILICON DIOXIDE-SILICON NITRIDE DOUBLE LAYERS. In: IEEE Transactions on Electron Devices. 1987 ; Vol. ED-34, No. 11.
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