### Abstract

A method to obtain respective fields in multilayers is proposed. The samples investigated are large-area n-channel transistors (L equals 1. 38 mm, W equals 1 mm) with Hall terminals, which have poly-Si (P-doped)/7. 5 nm-SiO//2 (thermally oxidized)/6. 3-nm-Si//3N//4/p-Si-substrate structures. In order to ensure steady-state conditions, the measurements were carried out 5 min. after decreasing gate voltage V//G stepwise. Magnetic field H (5. 2 kGauss) was imposed perpendicular to substrates. Hall voltage V//H is related to the surface charge density Q//s by Q//s equals rHI//D/V//H(r: Hall ratio, I//D: drain current). The nitride field E//Nis obtained as E//N equals (Q//D plus Q//S/ epsilon //N, where Q//D is depletion layer charge density, and epsilon //N is static dielectric constant of nitride. The oxide field E//0 is calculated as follows, assuming that the centroid of trapped charges Q//N in the nitride is at oxide-nitride interface.

Original language | English |
---|---|

Journal | IEEE Transactions on Electron Devices |

Volume | ED-34 |

Issue number | 11 |

Publication status | Published - 1987 Nov |

Externally published | Yes |

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### ASJC Scopus subject areas

- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)

### Cite this

*IEEE Transactions on Electron Devices*,

*ED-34*(11).

**HALL EFFECT ANALYSIS OF CHARGE TRANSPORT IN SILICON DIOXIDE-SILICON NITRIDE DOUBLE LAYERS.** / Hiraiwa, A.; Yugami, J.; Ihjima, S.; Kusaka, T.; Ohji, Y.

Research output: Contribution to journal › Article

*IEEE Transactions on Electron Devices*, vol. ED-34, no. 11.

}

TY - JOUR

T1 - HALL EFFECT ANALYSIS OF CHARGE TRANSPORT IN SILICON DIOXIDE-SILICON NITRIDE DOUBLE LAYERS.

AU - Hiraiwa, A.

AU - Yugami, J.

AU - Ihjima, S.

AU - Kusaka, T.

AU - Ohji, Y.

PY - 1987/11

Y1 - 1987/11

N2 - A method to obtain respective fields in multilayers is proposed. The samples investigated are large-area n-channel transistors (L equals 1. 38 mm, W equals 1 mm) with Hall terminals, which have poly-Si (P-doped)/7. 5 nm-SiO//2 (thermally oxidized)/6. 3-nm-Si//3N//4/p-Si-substrate structures. In order to ensure steady-state conditions, the measurements were carried out 5 min. after decreasing gate voltage V//G stepwise. Magnetic field H (5. 2 kGauss) was imposed perpendicular to substrates. Hall voltage V//H is related to the surface charge density Q//s by Q//s equals rHI//D/V//H(r: Hall ratio, I//D: drain current). The nitride field E//Nis obtained as E//N equals (Q//D plus Q//S/ epsilon //N, where Q//D is depletion layer charge density, and epsilon //N is static dielectric constant of nitride. The oxide field E//0 is calculated as follows, assuming that the centroid of trapped charges Q//N in the nitride is at oxide-nitride interface.

AB - A method to obtain respective fields in multilayers is proposed. The samples investigated are large-area n-channel transistors (L equals 1. 38 mm, W equals 1 mm) with Hall terminals, which have poly-Si (P-doped)/7. 5 nm-SiO//2 (thermally oxidized)/6. 3-nm-Si//3N//4/p-Si-substrate structures. In order to ensure steady-state conditions, the measurements were carried out 5 min. after decreasing gate voltage V//G stepwise. Magnetic field H (5. 2 kGauss) was imposed perpendicular to substrates. Hall voltage V//H is related to the surface charge density Q//s by Q//s equals rHI//D/V//H(r: Hall ratio, I//D: drain current). The nitride field E//Nis obtained as E//N equals (Q//D plus Q//S/ epsilon //N, where Q//D is depletion layer charge density, and epsilon //N is static dielectric constant of nitride. The oxide field E//0 is calculated as follows, assuming that the centroid of trapped charges Q//N in the nitride is at oxide-nitride interface.

UR - http://www.scopus.com/inward/record.url?scp=0023451897&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023451897&partnerID=8YFLogxK

M3 - Article

VL - ED-34

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 11

ER -