Hall effect in organic single-crystal field-effect transistors

Jun Takeya; Koichi Yamada; Kazuhito Tsukagoshi; Yoshinobu Aoyagi; Taishi Takenobu; Yoshihiro Iwasa

Hall effect in organic single-crystal field-effect transistors

Jun Takeya^*, Koichi Yamada, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu, Yoshihiro Iwasa

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C₄₂H₂₈) single crystals are shaped for the Hall-bar configuration so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. Moreover, the direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	95-100
Number of pages	6
Volume	937
Publication status	Published - 2006
Externally published	Yes
Event	2006 MRS Spring Meeting - San Francisco, CA Duration: 2006 Apr 17 → 2006 Apr 21

Other

Other	2006 MRS Spring Meeting
City	San Francisco, CA
Period	06/4/17 → 06/4/21

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

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title = "Hall effect in organic single-crystal field-effect transistors",

abstract = "We report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C42H28) single crystals are shaped for the Hall-bar configuration so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. Moreover, the direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.",

author = "Jun Takeya and Koichi Yamada and Kazuhito Tsukagoshi and Yoshinobu Aoyagi and Taishi Takenobu and Yoshihiro Iwasa",

year = "2006",

language = "English",

isbn = "1558998942",

volume = "937",

pages = "95--100",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2006 MRS Spring Meeting ; Conference date: 17-04-2006 Through 21-04-2006",

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TY - GEN

T1 - Hall effect in organic single-crystal field-effect transistors

AU - Takeya, Jun

AU - Yamada, Koichi

AU - Tsukagoshi, Kazuhito

AU - Aoyagi, Yoshinobu

AU - Takenobu, Taishi

AU - Iwasa, Yoshihiro

PY - 2006

Y1 - 2006

N2 - We report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C42H28) single crystals are shaped for the Hall-bar configuration so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. Moreover, the direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.

AB - We report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C42H28) single crystals are shaped for the Hall-bar configuration so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. Moreover, the direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.

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M3 - Conference contribution

AN - SCOPUS:33947632559

SN - 1558998942

SN - 9781558998940

VL - 937

SP - 95

EP - 100

BT - Materials Research Society Symposium Proceedings

T2 - 2006 MRS Spring Meeting

Y2 - 17 April 2006 through 21 April 2006

ER -

Hall effect in organic single-crystal field-effect transistors

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ASJC Scopus subject areas

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