Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

J. Senzaki, K. Fukuda, Y. Ishida, Y. Tanaka, H. Tanoue, Naoto Kobayashi, T. Tanaka, K. Arai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×10 15 cm -2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×10 14 cm -2, the experimental Hall mobility varies directly as T 3/2 below 80K and as T -3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, F. Ren, W. Pletschen, M. Murakami
Volume622
Publication statusPublished - 2000
Externally publishedYes
EventWide-Bandgap Electronic Devices - San Francisco, CA, United States
Duration: 2000 Apr 242000 Apr 27

Other

OtherWide-Bandgap Electronic Devices
CountryUnited States
CitySan Francisco, CA
Period00/4/2400/4/27

Fingerprint

Hall effect
Arsenic
Silicon carbide
Activation energy
Hall mobility
Temperature
Carrier concentration
Electric properties
silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Senzaki, J., Fukuda, K., Ishida, Y., Tanaka, Y., Tanoue, H., Kobayashi, N., ... Arai, K. (2000). Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide. In R. J. Shul, F. Ren, W. Pletschen, & M. Murakami (Eds.), Materials Research Society Symposium - Proceedings (Vol. 622)

Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide. / Senzaki, J.; Fukuda, K.; Ishida, Y.; Tanaka, Y.; Tanoue, H.; Kobayashi, Naoto; Tanaka, T.; Arai, K.

Materials Research Society Symposium - Proceedings. ed. / R.J. Shul; F. Ren; W. Pletschen; M. Murakami. Vol. 622 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Senzaki, J, Fukuda, K, Ishida, Y, Tanaka, Y, Tanoue, H, Kobayashi, N, Tanaka, T & Arai, K 2000, Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide. in RJ Shul, F Ren, W Pletschen & M Murakami (eds), Materials Research Society Symposium - Proceedings. vol. 622, Wide-Bandgap Electronic Devices, San Francisco, CA, United States, 00/4/24.
Senzaki J, Fukuda K, Ishida Y, Tanaka Y, Tanoue H, Kobayashi N et al. Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide. In Shul RJ, Ren F, Pletschen W, Murakami M, editors, Materials Research Society Symposium - Proceedings. Vol. 622. 2000
Senzaki, J. ; Fukuda, K. ; Ishida, Y. ; Tanaka, Y. ; Tanoue, H. ; Kobayashi, Naoto ; Tanaka, T. ; Arai, K. / Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide. Materials Research Society Symposium - Proceedings. editor / R.J. Shul ; F. Ren ; W. Pletschen ; M. Murakami. Vol. 622 2000.
@inproceedings{8256d01a05b44b8a9983ddf407de7d08,
title = "Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide",
abstract = "The arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×10 15 cm -2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×10 14 cm -2, the experimental Hall mobility varies directly as T 3/2 below 80K and as T -3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.",
author = "J. Senzaki and K. Fukuda and Y. Ishida and Y. Tanaka and H. Tanoue and Naoto Kobayashi and T. Tanaka and K. Arai",
year = "2000",
language = "English",
volume = "622",
editor = "R.J. Shul and F. Ren and W. Pletschen and M. Murakami",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

AU - Senzaki, J.

AU - Fukuda, K.

AU - Ishida, Y.

AU - Tanaka, Y.

AU - Tanoue, H.

AU - Kobayashi, Naoto

AU - Tanaka, T.

AU - Arai, K.

PY - 2000

Y1 - 2000

N2 - The arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×10 15 cm -2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×10 14 cm -2, the experimental Hall mobility varies directly as T 3/2 below 80K and as T -3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

AB - The arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×10 15 cm -2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×10 14 cm -2, the experimental Hall mobility varies directly as T 3/2 below 80K and as T -3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0034428314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034428314&partnerID=8YFLogxK

M3 - Conference contribution

VL - 622

BT - Materials Research Society Symposium - Proceedings

A2 - Shul, R.J.

A2 - Ren, F.

A2 - Pletschen, W.

A2 - Murakami, M.

ER -