Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors

Jui Fen Chang, Tomo Sakanoue, Yoann Olivier, Takafumi Uemura, Marie Beatrice Dufourg-Madec, Stephen G. Yeates, Jérôme Cornil, Jun Takeya, Alessandro Troisi, Henning Sirringhaus

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level.

Original languageEnglish
Article number066601
JournalPhysical Review Letters
Volume107
Issue number6
DOIs
Publication statusPublished - 2011 Aug 2
Externally publishedYes

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intramolecular structures
carrier waves
Hall resistance
optical measurement
Hall effect
charge carriers
wave functions
probes
spectroscopy
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chang, J. F., Sakanoue, T., Olivier, Y., Uemura, T., Dufourg-Madec, M. B., Yeates, S. G., ... Sirringhaus, H. (2011). Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors. Physical Review Letters, 107(6), [066601]. https://doi.org/10.1103/PhysRevLett.107.066601

Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors. / Chang, Jui Fen; Sakanoue, Tomo; Olivier, Yoann; Uemura, Takafumi; Dufourg-Madec, Marie Beatrice; Yeates, Stephen G.; Cornil, Jérôme; Takeya, Jun; Troisi, Alessandro; Sirringhaus, Henning.

In: Physical Review Letters, Vol. 107, No. 6, 066601, 02.08.2011.

Research output: Contribution to journalArticle

Chang, JF, Sakanoue, T, Olivier, Y, Uemura, T, Dufourg-Madec, MB, Yeates, SG, Cornil, J, Takeya, J, Troisi, A & Sirringhaus, H 2011, 'Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors', Physical Review Letters, vol. 107, no. 6, 066601. https://doi.org/10.1103/PhysRevLett.107.066601
Chang, Jui Fen ; Sakanoue, Tomo ; Olivier, Yoann ; Uemura, Takafumi ; Dufourg-Madec, Marie Beatrice ; Yeates, Stephen G. ; Cornil, Jérôme ; Takeya, Jun ; Troisi, Alessandro ; Sirringhaus, Henning. / Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors. In: Physical Review Letters. 2011 ; Vol. 107, No. 6.
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