Hardness of cubic silicon nitride

I. Tanaka, F. Oba, T. Sekine, E. Ito, A. Kubo, K. Tatsumi, H. Adachi, Tomoyuki Yamamoto

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We report that polycrystalline cubic-Si3N4 with a spinel structure and low oxygen concentration (<0.5 wt%) shows Vickers hardness of 43 GPa when measured with the indentation load of 10 mN. The hardness decreases with the increase of the indentation load, which can be ascribed to the presence of weak grain boundaries. The high hardness can be well explained by its large shear modulus as predicted by first-principles calculations.

Original languageEnglish
Pages (from-to)731-733
Number of pages3
JournalJournal of Materials Research
Volume17
Issue number4
Publication statusPublished - 2002 Apr
Externally publishedYes

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Silicon nitride
indentation
Indentation
silicon nitrides
Loads (forces)
hardness
Hardness
Vickers hardness
spinel
Grain boundaries
grain boundaries
Elastic moduli
Oxygen
shear
oxygen
silicon nitride
spinell

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Tanaka, I., Oba, F., Sekine, T., Ito, E., Kubo, A., Tatsumi, K., ... Yamamoto, T. (2002). Hardness of cubic silicon nitride. Journal of Materials Research, 17(4), 731-733.

Hardness of cubic silicon nitride. / Tanaka, I.; Oba, F.; Sekine, T.; Ito, E.; Kubo, A.; Tatsumi, K.; Adachi, H.; Yamamoto, Tomoyuki.

In: Journal of Materials Research, Vol. 17, No. 4, 04.2002, p. 731-733.

Research output: Contribution to journalArticle

Tanaka, I, Oba, F, Sekine, T, Ito, E, Kubo, A, Tatsumi, K, Adachi, H & Yamamoto, T 2002, 'Hardness of cubic silicon nitride', Journal of Materials Research, vol. 17, no. 4, pp. 731-733.
Tanaka I, Oba F, Sekine T, Ito E, Kubo A, Tatsumi K et al. Hardness of cubic silicon nitride. Journal of Materials Research. 2002 Apr;17(4):731-733.
Tanaka, I. ; Oba, F. ; Sekine, T. ; Ito, E. ; Kubo, A. ; Tatsumi, K. ; Adachi, H. ; Yamamoto, Tomoyuki. / Hardness of cubic silicon nitride. In: Journal of Materials Research. 2002 ; Vol. 17, No. 4. pp. 731-733.
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