Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy

Tsutomu Iida, Kentaro Harada, Shinji Kimura, Takayuki Shima, Hiroshi Katsumata, Yunosuke Makita, Hajime Shibata, Naoto Kobayashi, Shin ichiro Uekusa, Tokue Matsumori, Kazuhiro Kudo

Research output: Contribution to journalArticle

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Abstract

Low-energy (170 eV) C+ ion-beam doping during molecular beam epitaxy of GaAs was carried out using a combined ion beam and molecular beam epitaxy (CIBMBE) system. Incorporated C atoms were both electrically and optically well-activated as acceptors with doping levels up to 4 × 1019 cm-3 in the as-grown condition. In low temperature (2 K) photoluminescence (PL) spectra, C-related specific emissions were clearly observed, indicating good quality of the films. To understand the advantages of low-energy process by CIBMBE, film quality and the rate of C activation were compared with those obtained from 400 keV hot implantation of C at substrate temperatures up to 600°C. Through Raman scattering, 2 K PL and Hall effect measurements, it was found that the use of a low-energy C+ ion beam offers advantages such as low damage doping and good activation rate of incorporated C atoms.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume106
Issue number1-4
DOIs
Publication statusPublished - 1995 Dec 2
Externally publishedYes

Fingerprint

impingement
Molecular beam epitaxy
Ion beams
molecular beam epitaxy
ion beams
Carbon
carbon
Doping (additives)
Photoluminescence
Chemical activation
activation
photoluminescence
Atoms
energy
Hall effect
Ion implantation
atoms
Raman scattering
implantation
Raman spectra

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy. / Iida, Tsutomu; Harada, Kentaro; Kimura, Shinji; Shima, Takayuki; Katsumata, Hiroshi; Makita, Yunosuke; Shibata, Hajime; Kobayashi, Naoto; Uekusa, Shin ichiro; Matsumori, Tokue; Kudo, Kazuhiro.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 106, No. 1-4, 02.12.1995, p. 133-136.

Research output: Contribution to journalArticle

Iida, T, Harada, K, Kimura, S, Shima, T, Katsumata, H, Makita, Y, Shibata, H, Kobayashi, N, Uekusa, SI, Matsumori, T & Kudo, K 1995, 'Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy', Nuclear Inst. and Methods in Physics Research, B, vol. 106, no. 1-4, pp. 133-136. https://doi.org/10.1016/0168-583X(95)00691-5
Iida, Tsutomu ; Harada, Kentaro ; Kimura, Shinji ; Shima, Takayuki ; Katsumata, Hiroshi ; Makita, Yunosuke ; Shibata, Hajime ; Kobayashi, Naoto ; Uekusa, Shin ichiro ; Matsumori, Tokue ; Kudo, Kazuhiro. / Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy. In: Nuclear Inst. and Methods in Physics Research, B. 1995 ; Vol. 106, No. 1-4. pp. 133-136.
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