Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy

Tsutomu Iida, Kentaro Harada, Shinji Kimura, Takayuki Shima, Hiroshi Katsumata, Yunosuke Makita, Hajime Shibata, Naoto Kobayashi, Shin ichiro Uekusa, Tokue Matsumori, Kazuhiro Kudo

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Abstract

Low-energy (170 eV) C+ ion-beam doping during molecular beam epitaxy of GaAs was carried out using a combined ion beam and molecular beam epitaxy (CIBMBE) system. Incorporated C atoms were both electrically and optically well-activated as acceptors with doping levels up to 4 × 1019 cm-3 in the as-grown condition. In low temperature (2 K) photoluminescence (PL) spectra, C-related specific emissions were clearly observed, indicating good quality of the films. To understand the advantages of low-energy process by CIBMBE, film quality and the rate of C activation were compared with those obtained from 400 keV hot implantation of C at substrate temperatures up to 600°C. Through Raman scattering, 2 K PL and Hall effect measurements, it was found that the use of a low-energy C+ ion beam offers advantages such as low damage doping and good activation rate of incorporated C atoms.

Original languageEnglish
Pages (from-to)133-136
Number of pages4
JournalNuclear Inst. and Methods in Physics Research, B
Volume106
Issue number1-4
DOIs
Publication statusPublished - 1995 Dec 2
Externally publishedYes

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ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

Iida, T., Harada, K., Kimura, S., Shima, T., Katsumata, H., Makita, Y., Shibata, H., Kobayashi, N., Uekusa, S. I., Matsumori, T., & Kudo, K. (1995). Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy. Nuclear Inst. and Methods in Physics Research, B, 106(1-4), 133-136. https://doi.org/10.1016/0168-583X(95)00691-5