Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy

Tsutomu Iida, Kentaro Harada, Shinji Kimura, Takayuki Shima, Hiroshi Katsumata, Yunosuke Makita, Hajime Shibata, Naoto Kobayashi, Shin ichiro Uekusa, Tokue Matsumori, Kazuhiro Kudo

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Engineering & Materials Science

Physics & Astronomy