Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors

Toshiki Makimoto, K. Kumakura

Research output: Contribution to journalArticle

Abstract

The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reasonable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concentrations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.

Original languageEnglish
Pages (from-to)18-26
Number of pages9
JournalNTT R and D
Volume50
Issue number1
Publication statusPublished - 2001
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
Nitrides
Hole concentration
Doping (additives)
Energy gap
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, K.

In: NTT R and D, Vol. 50, No. 1, 2001, p. 18-26.

Research output: Contribution to journalArticle

@article{ca1ea40daefa4e68918caa658dfcc63e,
title = "Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors",
abstract = "The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reasonable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concentrations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.",
author = "Toshiki Makimoto and K. Kumakura",
year = "2001",
language = "English",
volume = "50",
pages = "18--26",
journal = "NTT R and D",
issn = "0915-2326",
publisher = "Telecommunications Association",
number = "1",

}

TY - JOUR

T1 - Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors

AU - Makimoto, Toshiki

AU - Kumakura, K.

PY - 2001

Y1 - 2001

N2 - The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reasonable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concentrations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.

AB - The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reasonable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concentrations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.

UR - http://www.scopus.com/inward/record.url?scp=0035059846&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035059846&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035059846

VL - 50

SP - 18

EP - 26

JO - NTT R and D

JF - NTT R and D

SN - 0915-2326

IS - 1

ER -