Abstract
The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reasonable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concentrations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.
| Original language | English |
|---|---|
| Pages (from-to) | 18-26 |
| Number of pages | 9 |
| Journal | NTT R and D |
| Volume | 50 |
| Issue number | 1 |
| Publication status | Published - 2001 Jan 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering