The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reasonable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concentrations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.
|Number of pages||9|
|Journal||NTT R and D|
|Publication status||Published - 2001 Jan 1|
ASJC Scopus subject areas
- Electrical and Electronic Engineering