Heavily p-type doping into group-III nitrides and their application to heterojunction bipolar transistors

T. Makimoto, K. Kumakura

Research output: Contribution to journalArticle

Abstract

The wide bandgap of group-III nitrides makes these materials suitable for devices operating at high temperatures and for ones with high output power. However, when using these materials, it is difficult to obtain p-type layers with high hole concentrations at room temperature. This means that devices made of group-III nitrides and using p-n junctions may be unable to attain reasonable performance or may become degraded in a relatively short time. We have obtained p-type layers with high hole concentrations using the characteristics of group-III nitrides and applied them to such devices as heterojunction bipolar transistors.

Original languageEnglish
Pages (from-to)18-26
Number of pages9
JournalNTT R and D
Volume50
Issue number1
Publication statusPublished - 2001 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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