Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

J. Han, T. S. Stavrinides, Masakazu Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

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70 Citations (Scopus)

Abstract

The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.

Original languageEnglish
Pages (from-to)840-842
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number8
DOIs
Publication statusPublished - 1993
Externally publishedYes

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nitrogen plasma
molecular beam epitaxy
electric contacts
light emitting diodes
semiconductor lasers
nitrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M., & Nurmikko, A. V. (1993). Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source. Applied Physics Letters, 62(8), 840-842. https://doi.org/10.1063/1.108568

Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source. / Han, J.; Stavrinides, T. S.; Kobayashi, Masakazu; Gunshor, R. L.; Hagerott, M. M.; Nurmikko, A. V.

In: Applied Physics Letters, Vol. 62, No. 8, 1993, p. 840-842.

Research output: Contribution to journalArticle

Han, J, Stavrinides, TS, Kobayashi, M, Gunshor, RL, Hagerott, MM & Nurmikko, AV 1993, 'Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source', Applied Physics Letters, vol. 62, no. 8, pp. 840-842. https://doi.org/10.1063/1.108568
Han, J. ; Stavrinides, T. S. ; Kobayashi, Masakazu ; Gunshor, R. L. ; Hagerott, M. M. ; Nurmikko, A. V. / Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source. In: Applied Physics Letters. 1993 ; Vol. 62, No. 8. pp. 840-842.
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