Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

J. Han, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

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Abstract

The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.

Original languageEnglish
Pages (from-to)840-842
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number8
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M., & Nurmikko, A. V. (1993). Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source. Applied Physics Letters, 62(8), 840-842. https://doi.org/10.1063/1.108568