Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

T. Nozaki, M. Iwamoto, K. Usami, K. Mukai, A. Hiraiwa

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

Original languageEnglish
Pages (from-to)449-459
Number of pages11
JournalJournal of Radioanalytical Chemistry
Volume52
Issue number2
DOIs
Publication statusPublished - 1979 Sep
Externally publishedYes

Fingerprint

Activation analysis
Activation Analysis
Helium
Silicon
Silicon nitride
Silicon wafers
Oxygen
Surface analysis
Chemical activation
silicon nitride
Substrates

ASJC Scopus subject areas

  • Radiology Nuclear Medicine and imaging
  • Molecular Medicine

Cite this

Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers. / Nozaki, T.; Iwamoto, M.; Usami, K.; Mukai, K.; Hiraiwa, A.

In: Journal of Radioanalytical Chemistry, Vol. 52, No. 2, 09.1979, p. 449-459.

Research output: Contribution to journalArticle

Nozaki, T. ; Iwamoto, M. ; Usami, K. ; Mukai, K. ; Hiraiwa, A. / Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers. In: Journal of Radioanalytical Chemistry. 1979 ; Vol. 52, No. 2. pp. 449-459.
@article{4ac07aa71ff146c59e07d75262a67961,
title = "Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers",
abstract = "Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.",
author = "T. Nozaki and M. Iwamoto and K. Usami and K. Mukai and A. Hiraiwa",
year = "1979",
month = "9",
doi = "10.1007/BF02521296",
language = "English",
volume = "52",
pages = "449--459",
journal = "Journal of Radioanalytical and Nuclear Chemistry",
issn = "0022-4081",
publisher = "Elsevier BV",
number = "2",

}

TY - JOUR

T1 - Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

AU - Nozaki, T.

AU - Iwamoto, M.

AU - Usami, K.

AU - Mukai, K.

AU - Hiraiwa, A.

PY - 1979/9

Y1 - 1979/9

N2 - Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

AB - Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

UR - http://www.scopus.com/inward/record.url?scp=51649159846&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51649159846&partnerID=8YFLogxK

U2 - 10.1007/BF02521296

DO - 10.1007/BF02521296

M3 - Article

VL - 52

SP - 449

EP - 459

JO - Journal of Radioanalytical and Nuclear Chemistry

JF - Journal of Radioanalytical and Nuclear Chemistry

SN - 0022-4081

IS - 2

ER -