Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

Masakazu Kobayashi, H. Tosaka, T. Nagatake, T. Yoshida, A. Yoshikawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

Original languageEnglish
Pages (from-to)745-749
Number of pages5
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
Publication statusPublished - 1994 Apr 2
Externally publishedYes

Fingerprint

Nitrogen plasma
Helium
nitrogen plasma
Gases
helium
Plasma Gases
gases
Semiconductor lasers
Nitrogen
Doping (additives)
mixing ratios
Plasmas
lasing
semiconductor lasers
nitrogen

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe. / Kobayashi, Masakazu; Tosaka, H.; Nagatake, T.; Yoshida, T.; Yoshikawa, A.

In: Journal of Crystal Growth, Vol. 138, No. 1-4, 02.04.1994, p. 745-749.

Research output: Contribution to journalArticle

Kobayashi, Masakazu ; Tosaka, H. ; Nagatake, T. ; Yoshida, T. ; Yoshikawa, A. / Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe. In: Journal of Crystal Growth. 1994 ; Vol. 138, No. 1-4. pp. 745-749.
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