Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

Masakazu Kobayashi; H. Tosaka; T. Nagatake; T. Yoshida; A. Yoshikawa

doi:10.1016/0022-0248(94)90900-8

Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

Masakazu Kobayashi, H. Tosaka, T. Nagatake, T. Yoshida, A. Yoshikawa

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 10¹⁶ to 7 × 10¹⁷ cm^-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 10¹⁶ to 4 × 10¹⁷ cm^-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

Original language	English
Pages (from-to)	745-749
Number of pages	5
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90900-8
Publication status	Published - 1994 Apr 2
Externally published	Yes

Fingerprint

ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Kobayashi, M., Tosaka, H., Nagatake, T., Yoshida, T., & Yoshikawa, A. (1994). Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe. Journal of Crystal Growth, 138(1-4), 745-749. https://doi.org/10.1016/0022-0248(94)90900-8

@article{4ace6b287d514c5c8611960f2db008c7,

title = "Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe",

abstract = "Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.",

author = "Masakazu Kobayashi and H. Tosaka and T. Nagatake and T. Yoshida and A. Yoshikawa",

year = "1994",

month = apr

day = "2",

doi = "10.1016/0022-0248(94)90900-8",

language = "English",

volume = "138",

pages = "745--749",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

}

TY - JOUR

T1 - Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

AU - Kobayashi, Masakazu

AU - Tosaka, H.

AU - Nagatake, T.

AU - Yoshida, T.

AU - Yoshikawa, A.

PY - 1994/4/2

Y1 - 1994/4/2

N2 - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

AB - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

UR - http://www.scopus.com/inward/record.url?scp=0028760722&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028760722&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(94)90900-8

DO - 10.1016/0022-0248(94)90900-8

M3 - Article

AN - SCOPUS:0028760722

VL - 138

SP - 745

EP - 749

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -

Access to Document

10.1016/0022-0248(94)90900-8