Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

M. Kobayashi; H. Tosaka; T. Nagatake; T. Yoshida; A. Yoshikawa

doi:10.1016/0022-0248(94)90900-8

Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

M. Kobayashi^*, H. Tosaka, T. Nagatake, T. Yoshida, A. Yoshikawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 10¹⁶ to 7 × 10¹⁷ cm^-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 10¹⁶ to 4 × 10¹⁷ cm^-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

Original language	English
Pages (from-to)	745-749
Number of pages	5
Journal	Journal of Crystal Growth
Volume	138
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(94)90900-8
Publication status	Published - 1994 Apr 2
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(94)90900-8

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title = "Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe",

abstract = "Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.",

author = "M. Kobayashi and H. Tosaka and T. Nagatake and T. Yoshida and A. Yoshikawa",

note = "Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas, New Functionality Materials - Design, Preparation and Control, from the Ministry of Education, Science and Culture, and partly supported by a Research Promotion Fund in the field of Interna-",

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doi = "10.1016/0022-0248(94)90900-8",

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T1 - Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

AU - Kobayashi, M.

AU - Tosaka, H.

AU - Nagatake, T.

AU - Yoshida, T.

AU - Yoshikawa, A.

N1 - Funding Information: This work was partly supported by a Grant-in-Aid for Scientific Research on Priority Areas, New Functionality Materials - Design, Preparation and Control, from the Ministry of Education, Science and Culture, and partly supported by a Research Promotion Fund in the field of Interna-

PY - 1994/4/2

Y1 - 1994/4/2

N2 - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

AB - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

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JF - Journal of Crystal Growth

SN - 0022-0248

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ER -

Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

Abstract

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