Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

Masakazu Kobayashi, H. Tosaka, T. Nagatake, T. Yoshida, A. Yoshikawa

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Abstract

Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

Original languageEnglish
Pages (from-to)745-749
Number of pages5
JournalJournal of Crystal Growth
Volume138
Issue number1-4
DOIs
Publication statusPublished - 1994 Apr 2
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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