Abstract
Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.
| Original language | English |
|---|---|
| Pages (from-to) | 745-749 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 138 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1994 Apr 2 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe. / Kobayashi, Masakazu; Tosaka, H.; Nagatake, T.; Yoshida, T.; Yoshikawa, A.
In: Journal of Crystal Growth, Vol. 138, No. 1-4, 02.04.1994, p. 745-749.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe
AU - Kobayashi, Masakazu
AU - Tosaka, H.
AU - Nagatake, T.
AU - Yoshida, T.
AU - Yoshikawa, A.
PY - 1994/4/2
Y1 - 1994/4/2
N2 - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.
AB - Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.
UR - http://www.scopus.com/inward/record.url?scp=0028760722&partnerID=8YFLogxK
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U2 - 10.1016/0022-0248(94)90900-8
DO - 10.1016/0022-0248(94)90900-8
M3 - Article
AN - SCOPUS:0028760722
VL - 138
SP - 745
EP - 749
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -