Abstract
Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.
| Original language | English |
|---|---|
| Pages (from-to) | 745-749 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 138 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1994 Apr 2 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Kobayashi, M., Tosaka, H., Nagatake, T., Yoshida, T., & Yoshikawa, A. (1994). Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe. Journal of Crystal Growth, 138(1-4), 745-749. https://doi.org/10.1016/0022-0248(94)90900-8