Hetero-epitaxial-double-atomic-layer system of monolayer graphene/monolayer h-BN on Ni(111)

C. Oshima, A. Itoh, E. Rokuta, T. Tanaka, K. Yamashita, T. Sakurai

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

A double-atomic-layer system of monolayer graphene/monolayer h-BN has been prepared in an epitaxial manner on Ni(111) surface. The graphene overlayer formation changes drastically the pristine interface between the h-BN layer and Ni(111). As a result, a peculiar property of the pristine monolayer h-BN on Ni(111) changes to a bulk-like one. The π-d orbital hybridization at the interface disappears. Accordingly, a metallic character of monolayer h-BN disappears and softening TO phonons return to the normal one. The reduced lattice constant of h-BN presumably returns to the bulk one. The same phenomenon occurs by surface contaminations instead of monolayer graphene formation.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalSolid State Communications
Volume116
Issue number1
DOIs
Publication statusPublished - 2000 Aug 22

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Graphene
Monolayers
graphene
softening
contamination
phonons
orbitals
Phonons
Lattice constants
Contamination

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hetero-epitaxial-double-atomic-layer system of monolayer graphene/monolayer h-BN on Ni(111). / Oshima, C.; Itoh, A.; Rokuta, E.; Tanaka, T.; Yamashita, K.; Sakurai, T.

In: Solid State Communications, Vol. 116, No. 1, 22.08.2000, p. 37-40.

Research output: Contribution to journalArticle

Oshima, C, Itoh, A, Rokuta, E, Tanaka, T, Yamashita, K & Sakurai, T 2000, 'Hetero-epitaxial-double-atomic-layer system of monolayer graphene/monolayer h-BN on Ni(111)', Solid State Communications, vol. 116, no. 1, pp. 37-40. https://doi.org/10.1016/S0038-1098(00)00268-4
Oshima, C. ; Itoh, A. ; Rokuta, E. ; Tanaka, T. ; Yamashita, K. ; Sakurai, T. / Hetero-epitaxial-double-atomic-layer system of monolayer graphene/monolayer h-BN on Ni(111). In: Solid State Communications. 2000 ; Vol. 116, No. 1. pp. 37-40.
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