Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

Mohd Syamsul, Nobutaka Oi, Satoshi Okubo, Taisuke Kageura, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    The exceptional performance of diamond-based field-effect transistor technology is not restricted to devices that use single crystalline diamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length ( LGD) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I ON/I OFF ratio of 109 were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.

    Original languageEnglish
    Article number815093
    Pages (from-to)51-54
    Number of pages4
    JournalIEEE Electron Device Letters
    Volume39
    Issue number1
    DOIs
    Publication statusPublished - 2018 Jan 1

    Keywords

    • Diamond
    • FETs
    • heteroepitaxial
    • high voltage
    • two-dimensional hole gas

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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