Abstract
Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.
| Original language | English |
|---|---|
| Pages (from-to) | 1277-1280 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 237-239 |
| Issue number | 1-4 II |
| DOIs | |
| Publication status | Published - 2002 Apr |
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Keywords
- A1. Nucleation
- A3. Chemical vapor deposition processes
- A3. Vapor-phase epitaxy
- B1. Diamond
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition. / Tachiki, Minoru; Fujisaki, Toyokatsu; Taniyama, Norikazu; Kudo, Minoru; Kawarada, Hiroshi.
In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 II, 04.2002, p. 1277-1280.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition
AU - Tachiki, Minoru
AU - Fujisaki, Toyokatsu
AU - Taniyama, Norikazu
AU - Kudo, Minoru
AU - Kawarada, Hiroshi
PY - 2002/4
Y1 - 2002/4
N2 - Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.
AB - Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.
KW - A1. Nucleation
KW - A3. Chemical vapor deposition processes
KW - A3. Vapor-phase epitaxy
KW - B1. Diamond
UR - http://www.scopus.com/inward/record.url?scp=0036530430&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036530430&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)02067-X
DO - 10.1016/S0022-0248(01)02067-X
M3 - Article
AN - SCOPUS:0036530430
VL - 237-239
SP - 1277
EP - 1280
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4 II
ER -