Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition

Minoru Tachiki, Toyokatsu Fujisaki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.

Original languageEnglish
Pages (from-to)1277-1280
Number of pages4
JournalJournal of Crystal Growth
Volume237-239
Issue number1 4 II
DOIs
Publication statusPublished - 2002 Apr

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Keywords

  • A1. Nucleation
  • A3. Chemical vapor deposition processes
  • A3. Vapor-phase epitaxy
  • B1. Diamond

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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