Abstract
Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.
| Original language | English |
|---|---|
| Pages (from-to) | 1277-1280 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 237-239 |
| Issue number | 1 4 II |
| DOIs | |
| Publication status | Published - 2002 Apr |
Keywords
- A1. Nucleation
- A3. Chemical vapor deposition processes
- A3. Vapor-phase epitaxy
- B1. Diamond
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
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Cite this
Tachiki, M., Fujisaki, T., Taniyama, N., Kudo, M., & Kawarada, H. (2002). Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition. Journal of Crystal Growth, 237-239(1 4 II), 1277-1280. https://doi.org/10.1016/S0022-0248(01)02067-X