Abstract
Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.
Original language | English |
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Pages (from-to) | 1277-1280 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 237-239 |
Issue number | 1 4 II |
DOIs | |
Publication status | Published - 2002 Apr |
Keywords
- A1. Nucleation
- A3. Chemical vapor deposition processes
- A3. Vapor-phase epitaxy
- B1. Diamond
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry